Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)最新文献

Software aided failure analysis using ATPG tool 软件辅助故障分析使用ATPG工具

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-13 DOI: 10.1109/IPFA.2001.941488

C. Burmer, P. Egger

引用次数: 12

Single contact optical beam induced currents (SCOBIC)-technique and applications 单接触光束感应电流(SCOBIC)技术及应用

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-13 DOI: 10.1109/IPFA.2001.941452

J. Chin, M. Palaniappan, J. Phang, D. Chan, C. E. Soh, G. Gilfeather

引用次数: 3

Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication 无源电压对比和聚焦离子束在金属晶圆制造缺陷失效分析中的应用

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-13 DOI: 10.1109/IPFA.2001.941465

G. Ang, Y. Hua, S. K. Loh, Yogaspari, S. Redkar

引用次数: 4

Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs 高温偏置应力对大功率vdmosfet辐射响应的影响

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-13 DOI: 10.1109/IPFA.2001.941495

N. Stojadinovic, S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic

引用次数: 4

Failure mechanism study for high resistance contact in CMOS devices CMOS器件中高阻触点失效机理研究

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941470

J. Y. Dai, S. Ansari, C. L. Tay, S. F. Tee, E. Er, S. Redkar

{"title":"Failure mechanism study for high resistance contact in CMOS devices","authors":"J. Y. Dai, S. Ansari, C. L. Tay, S. F. Tee, E. Er, S. Redkar","doi":"10.1109/IPFA.2001.941470","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941470","url":null,"abstract":"In advanced CMOS manufacturing, when aspects including contacts with W plugs are being miniaturised, high resistance contacts causing low yield becomes a common issue. In failure analysis, contact failures such due to insufficient trench etching and particle blocking which can cause extremely high resistance or opens are relatively easy to isolate and identify. However, for those contacts with resistance marginally higher than normal, the root cause is very difficult to identify by traditional methods like passive voltage contrast (PVC) and scanning electron microscopy (SEM), or focused ion beam (FIB) technology, which is quite successful for the open contact cases. This contact resistance variation is normally due to the narrow process window or process parameters drifting and may lead to relatively low yield. Direct observation of these contacts by transmission electron microscopy (TEM) provides detailed microstructural and chemical information which correlates to the failure and are unobtainable by other material analysis techniques. In this paper, we report a novel failure mechanism of the high resistance contact revealed by TEM study. Direct evidence is provided to show the impact of process changes on the contact structure which may correlate to the high resistance.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124982000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Modeling failure modes for submicron devices 亚微米器件的失效模式建模

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941477

W. McMahon, A. Haggag, K. Hess

引用次数: 2

Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique 用GIDL电流技术分析薄膜SOI mosfet的浮体效应

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941497

M. Dunga, A. Kumar, V. Ramgopal Rao

引用次数: 13

A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers 一种n-GaAs欧姆接触降解活化能的快速评价方法

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941471

Zhang Wan-rong, Li Zhi-guo, Mu Fu-chen, Wang Li-xin, Sun Ying-hua, Cheng Yao-hai, Chen Jian-xin, Shen Guang-di

引用次数: 4

Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing 高场、热载子和辐射应力对n沟道多晶硅tft器件性能的影响

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941498

A. Khamesra, R. Lal, J. Vasi, K. P. Kumar, J. Sin

{"title":"Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing","authors":"A. Khamesra, R. Lal, J. Vasi, K. P. Kumar, J. Sin","doi":"10.1109/IPFA.2001.941498","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941498","url":null,"abstract":"There has been increasing interest in polysilicon thin film transistors (TFTs) for high-performance applications, particularly in high-resolution displays. For these applications, the primary requirement is that the TFTs have a low threshold voltage, low and stable leakage current and reasonably high carrier mobility. The poly-Si TFTs typically have sufficiently large mobilities to be used for high-drive and moderately high-frequency applications. However, since low temperatures are used in poly-Si TFT fabrication, both semiconducting and insulating layers are of poorer quality than those used in crystalline-Si technology. Consequently, long term TFT stability is an important issue. A considerable amount of research has focused on the stability of poly-Si TFTs. The instabilities are basically associated with hot carrier injection and degradation, negative gate bias instability and gate-induced carrier injection and trapping (Young, 1996). This leads to degradation of several device parameters such as threshold voltage, mobility, transconductance, and subthreshold slope. The work presented here is a comprehensive study of degradation in low temperature (/spl les/600/spl deg/C) poly-Si TFTs due to high-field, hot-carrier and ionizing radiation stressing. This unified approach makes it possible to identify the key reasons for degradation. Furthermore, a systematic study of the dependence on device geometry, as reported here, also helps understanding of the degradation mechanisms.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126886947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

ESD effect in GMR heads in the trim shunt tab process 在微调分流卡卡过程中，GMR磁头中的ESD效应

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI: 10.1109/IPFA.2001.941469

A. Siritaratiwat, N. Suwannata, J. Pinnoi, C. Puprichitkun

引用次数: 1