ESD effect in GMR heads in the trim shunt tab process

A. Siritaratiwat, N. Suwannata, J. Pinnoi, C. Puprichitkun
{"title":"ESD effect in GMR heads in the trim shunt tab process","authors":"A. Siritaratiwat, N. Suwannata, J. Pinnoi, C. Puprichitkun","doi":"10.1109/IPFA.2001.941469","DOIUrl":null,"url":null,"abstract":"The electrostatic discharge (ESD) effect is widely known as a main cause of damage in giant magnetoresistance (GMR) heads (Wallash and Kim, 1995). The transient current may strike the GMR head directly by passing the leads (Li-Yan Zhu, 1999) and this may be prevented by shunting the GMR leads (Bajorek et al, 1995). However, after completing the head gimbal assembly (HGA) production, the shunt leads have to be trimmed in order to test its electrical characteristics. This is thought to cause the ESD effect while trimming the shunt tab of a GMR head, and is investigated here.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"2001 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2001.941469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The electrostatic discharge (ESD) effect is widely known as a main cause of damage in giant magnetoresistance (GMR) heads (Wallash and Kim, 1995). The transient current may strike the GMR head directly by passing the leads (Li-Yan Zhu, 1999) and this may be prevented by shunting the GMR leads (Bajorek et al, 1995). However, after completing the head gimbal assembly (HGA) production, the shunt leads have to be trimmed in order to test its electrical characteristics. This is thought to cause the ESD effect while trimming the shunt tab of a GMR head, and is investigated here.
在微调分流卡卡过程中,GMR磁头中的ESD效应
众所周知,静电放电(ESD)效应是巨磁电阻(GMR)磁头损坏的主要原因(Wallash和Kim, 1995)。暂态电流可以通过引线直接冲击GMR磁头(朱立岩,1999),这可以通过分流GMR引线来防止(Bajorek等人,1995)。然而,在完成头万向节组件(HGA)生产后,分流引线必须修剪,以测试其电气特性。在修整GMR头的分流标签时,这被认为会导致ESD效应,并在这里进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信