Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941497

M. Dunga, A. Kumar, V. Ramgopal Rao

引用次数: 13

Abstract

In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain /spl beta/ has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.

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用GIDL电流技术分析薄膜SOI mosfet的浮体效应

本文采用一种新型的栅极感应漏极电流(GIDL)技术，对横向不对称沟道(LAC)和传统均匀掺杂沟道(均匀)SOI mosfet中的浮体效应进行了分析。利用GIDL电流技术对LAC和均匀SOI mosfet的寄生双极电流增益/spl beta/进行了实验测量。利用二维器件模拟解释了在LAC SOI mosfet中观察到的较低寄生双极电流增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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