高温偏置应力对大功率vdmosfet辐射响应的影响

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-13 DOI:10.1109/IPFA.2001.941495

N. Stojadinovic, S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic

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引用次数: 4

摘要

研究了辐照前高温偏置应力对大功率vdmosfet辐射响应的影响。在应力器件中观察到较大的辐照诱导阈值电压位移和在非应力器件中观察到相当大的迁移率降低。根据辐照前应力效应的机制，计算和分析了栅极氧化捕获电荷和界面捕获密度的潜在变化。

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Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs

The effects of pre-irradiation elevated-temperature bias stressing on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed devices and considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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