Effects of electron-beam lithography on thin gate oxide reliability

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941454

Pei Fen Chong, B. Cho, E. Chor, M. Joo

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Abstract

In view of the rapid downscaling of design rules in CMOS technologies, current optical lithography tools are expected to be replaced with shorter wavelength lithography tools in the near future. One of the strong candidates for the next generation lithography tools is electron-beam (e-beam) lithography, in order to achieve the required fine geometry definition. However, e-beam irradiation of MOS structures can induce radiation damage, especially to the thin gate oxide. In this paper, the effects of e-beam lithography on thin gate oxide reliability are studied.

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电子束光刻对薄栅氧化物可靠性的影响

鉴于CMOS技术中设计规则的快速缩小，目前的光学光刻工具有望在不久的将来被更短波长的光刻工具所取代。下一代光刻工具的有力候选之一是电子束(电子束)光刻，以实现所需的精细几何定义。然而，电子束辐照MOS结构会引起辐射损伤，特别是对薄栅氧化物。本文研究了电子束光刻技术对薄栅氧化物可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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