Influence of impact ionization stresses on AlGaAs-InGaAs HEMT performances

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941494

B. Lambert, N. Malbert, Labat, A. Touboul, P. Huguet

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Abstract

Pseudomorphic HEMTs are widely used in medium power applications. Users are concerned by the reliability of PHEMT-based technologies submitted to RF overdrive. In particular, III-V FETs may suffer from impact ionization effect and surface related mechanisms. The small-signal response of interface states at passivated III-V semiconductor surfaces has been measured over a wide frequency range from 1 Hz to microwave frequencies (Iizuka et al, 1997). During RF operation, impact ionization mechanisms often occur in the channel and their influence on the reliability of devices is not well known. In this work, the effect of life-tests performed on PHEMTs biased in the impact ionization regime with or without thermal stress has been analyzed by monitoring the evolution of DC electrical characteristics and their temperature dependence. The reverse gate current is measured as a function of temperature to observe the behavior of surface traps located at the drain edge of the gate in access regions. Correlation between drain current transients, temperature dependence of the reverse gate current and the on-state breakdown loci is discussed to evaluate both the influence of surface traps on electrical parameters and their evolution after aging.

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冲击电离应力对AlGaAs-InGaAs HEMT性能的影响

伪晶hemt广泛应用于中功率领域。用户关心的是基于phemt的技术提交给RF超速驱动的可靠性。特别是III-V型场效应管可能受到冲击电离效应和表面相关机制的影响。钝化III-V半导体表面的界面状态的小信号响应已经在从1hz到微波频率的宽频率范围内进行了测量(Iizuka et al, 1997)。在射频工作过程中，通道中经常发生冲击电离机制，其对器件可靠性的影响尚不清楚。在这项工作中，通过监测直流电气特性的演变及其温度依赖性，分析了在有或没有热应力的冲击电离状态下对phemt进行的寿命测试的影响。测量反向栅极电流作为温度的函数，以观察位于栅极漏极边缘的表面陷阱在通道区域的行为。讨论了漏极电流瞬态、反栅极电流的温度依赖性和导通击穿位点之间的关系，以评估表面陷阱对电学参数的影响及其老化后的演变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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