反应离子蚀刻仪作为FC-PGA封装的物理和失效分析工具

Ng Sea Chooi
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引用次数: 0

摘要

集成电路封装的失效分析通常需要选择性地去除材料,如阻焊剂,油墨交换,更重要的是封装衬底材料。虽然机械样品制备在某些情况下是有用的,但它缺乏精确控制去除程度所需的选择性。反应离子蚀刻(RIE)在有机栅极阵列(OLGA) FA活性中用于去除封装衬底。然而,在倒装引脚网格阵列(FCPGA)封装的发展阶段,RIE的使用面临一些困难。进一步的开发表明,封装差异(例如增加引脚和更大的外形尺寸)导致RIE从OLGA到FCPGA的使用扩散略微复杂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The reactive ion etcher as a physical and failure analysis tool for FC-PGA packages
Failure analysis of integrated circuit packages often requires the selective removal of material such as solder resists, ink swap and more importantly package substrate material. Although mechanical sample preparation has been useful in some cases, it lacks the selectivity needed to precisely control the degree of removal. Reactive ion etching (RIE) has been used during the organic land grid array (OLGA) FA activities for removing package substrate. However, during the development stage of flip chip pin grid array (FCPGA) packaging, the use of RIE faced some difficulty. Further development reveals that package differences such as the addition of pins and larger form factor has caused the proliferation of the usage of RIE from OLGA to FCPGA to be slightly complicated.
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