Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)最新文献

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High reliable solder joints using Sn-Pb-La solder alloy 采用Sn-Pb-La焊料合金的高可靠焊点
X. Ma, Y. Qian, F. Liu, F. Yoshida
{"title":"High reliable solder joints using Sn-Pb-La solder alloy","authors":"X. Ma, Y. Qian, F. Liu, F. Yoshida","doi":"10.1109/IPFA.2001.941456","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941456","url":null,"abstract":"Reliability of solder joints is essential to electronic packaging since they provide both the mechanical and electrical connections at PCB level assembly. Several efforts have been made to improve the mechanical properties of traditional Sn60-Pb40 solder alloys by adding small amounts of alloy elements, such as Ag, Sb, Cu, Pd, etc. (Vaynman et al., 1998; Takemoto et al., 1997; Devore, 1982). Although the provided experimental data illustrated the effect of improvements, the corresponding modification mechanism had been little discussed. In this work, a small amount of rare earth element La was added to Sn60-Pb40 solder in order to improve the reliability of solder joints without increasing the melting point. High temperature tensile tests of solder alloys and thermal fatigue tests of solder joints were conducted to validate the improvement. SEM observation further clarified the corresponding microstructure modification. Finally, the effect of adding small amount of La was deeply studied based upon thermodynamic models and eutectic growth kinetics.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"528 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124500736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Application of focused ion beam system as a defect localization and root cause analysis tool 聚焦离子束系统作为缺陷定位和根本原因分析工具的应用
C. C. Ooi, K. H. Siek, K. Sim
{"title":"Application of focused ion beam system as a defect localization and root cause analysis tool","authors":"C. C. Ooi, K. H. Siek, K. Sim","doi":"10.1109/IPFA.2001.941466","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941466","url":null,"abstract":"The focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects after electrical fault isolation. In the highly competitive and challenging environment prevalent at present, failure analysis throughput time is of utmost important. Therefore, a quick, efficient and reliable physical failure analysis technique is needed. This paper discusses the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130719101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Failure analysis challenges 故障分析挑战
Larry Wagner
{"title":"Failure analysis challenges","authors":"Larry Wagner","doi":"10.1109/IPFA.2001.941451","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941451","url":null,"abstract":"Semiconductor trends as embodied in the International Technology Roadmap for Semiconductors (ITRS) provides a guide for the challenges facing the failure analysis community. The technical challenges fall primarily into two categories: failure site isolation and physical analysis. The failure site isolation challenges are driven primarily by the device complexity and reduced accessibility of circuit nets. Additional challenges arise due to the increase in device operating speed and pin count. The challenges in physical analysis are driven primarily by smaller device feature sizes and by the host of new materials being introduced. In addition to the technical challenges, infrastructure changes are also likely to occur. The likely industry paths for addressing these challenges are discussed. The International Sematech Product Analysis Forum (Joseph et al, 2000) has identified ten primary challenges for the future of the failure analysis in the semiconductor industry: localization and electrical characterization; deprocessing techniques for new materials; system-on-a-chip; imaging of small defects and structures; detection and characterization of nonvisual defects; verification and test; globally dispersed entities as virtual factory; fault isolation and simulation software; cost of failure analysis; complexity and volume of data. These challenges have been correlated to the Technology Working Group Difficult Challenge table in the ITRS.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115538146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Thermo-mechanical analysis for a multi chip build up substrate based package 基于多芯片构建基板封装的热力学分析
Xiaowu Zhang, C. Lee, W. Hua, M. Iyer, Teo Poi Siong, D. Pinjala, S. Srinivasamurthy
{"title":"Thermo-mechanical analysis for a multi chip build up substrate based package","authors":"Xiaowu Zhang, C. Lee, W. Hua, M. Iyer, Teo Poi Siong, D. Pinjala, S. Srinivasamurthy","doi":"10.1109/IPFA.2001.941457","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941457","url":null,"abstract":"This paper presents a thermo-mechanical analysis of a multichip module (MCM) package design, with emphasis on the package warpage, thermally induced stress and the 2nd level solder joint reliability. The MCM package contains four flip chips which are mounted on a build up substrate. Firstly, the effect of the positioning of four silicon dice within the MCM package on the package warpage was studied. Secondly, the effect of package dimensions (the heat spreader thickness, structural adhesive thickness and substrate thickness) on the maximum residual stress and warpage of the package were performed. Finally, this paper presents a 3D sliced model for solder joint reliability of the MCM assembly. A creep constitutive relation is adopted for the 63Sn/37Pb solder to account for its time and temperature dependence in thermal cycling. The fatigue life of the solder joints is estimated by Darveaux's approach. A series of parametric studies is performed by changing the package dimensions. The results obtained from the modeling are useful for the design of multichip packages.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127102895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
New methods for scanning ultrasonic microscopy applications for failure analysis of microassembling technologies 扫描超声显微镜应用于微装配技术失效分析的新方法
L. Béchou, Y. Ousten, Y. Danto
{"title":"New methods for scanning ultrasonic microscopy applications for failure analysis of microassembling technologies","authors":"L. Béchou, Y. Ousten, Y. Danto","doi":"10.1109/IPFA.2001.941485","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941485","url":null,"abstract":"Scanning acoustic microscopy (SAM) is now a common detection method which produces high resolution images with focused ultrasonic waves ranging from 10 to 500 MHz. In this paper, first we propose improved methodologies in order to measure time-of-flight (TOF) with high accuracy and so localize defects in depth by digital signal processing used for the study of nonstationary signals as acoustic echoes. Secondly, we compare imaging mode capabilities associated with conventional acoustic focused probe propagation for SAM. Then, we apply these methods for localization of defects and failure analysis of ceramic capacitors, die-attach assembly and solder joint evaluation in a CBGA technology by C-SCAN analysis.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125179633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides 薄栅氧化物准击穿的双极电流应力和电恢复
W. Loh, B. Cho, M. Li
{"title":"Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides","authors":"W. Loh, B. Cho, M. Li","doi":"10.1109/IPFA.2001.941455","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941455","url":null,"abstract":"The quasi-breakdown mechanism (QB) of thin gate oxides is investigated under bipolar constant current stressing. It was observed that there exist two distinct stages in quasi-breakdown (QB), characterized by their electrical recoverability. In the first or recoverable stage, leakage current after QB could be recovered to the SILC level by applying proper reverse bias. In the second or unrecoverable stage, however, no electrical recovery is observed. Conduction mechanisms at QB were also studied using carrier separation and DCIV techniques.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"325 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133407018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ESD implantations in 0.18-/spl mu/m salicided CMOS technology for on-chip ESD protection with layout consideration ESD植入在0.18-/spl mu/m的盐化CMOS技术中进行片上ESD保护,并考虑布局
M. Ker, Che-Hao Chuang
{"title":"ESD implantations in 0.18-/spl mu/m salicided CMOS technology for on-chip ESD protection with layout consideration","authors":"M. Ker, Che-Hao Chuang","doi":"10.1109/IPFA.2001.941461","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941461","url":null,"abstract":"ESD robustness of CMOS devices used in the I/O pad is a major reliability issue as the diffusion junction depth is reduced and LDD (lightly-doped drain)/salicide structures are generally used in sub-quarter-micron CMOS technology. In order to enhance ESD robustness, some ESD implantations have been reported for inclusion into the process flow to modify the device structures for ESD protection (Lee, 1997; Hsue and Ko, 1994; Lowrey and Chance, 1996; Yang, 2000). In this paper, the effectiveness of different ESD implantation solutions on NMOS and diode devices for ESD protection is investigated in a 0.18 /spl mu/m salicided bulk CMOS process. The second breakdown current (It2) of the fabricated devices is measured by the transmission line pulse generator (TLPG). The human-body-model (HBM) and the machine-model (MM) ESD levels of these devices are also measured and compared. The layout dependence of NMOS devices and diodes with different ESD implantations are also investigated.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121247837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Borderless contact leakage induced standby current failure on sub-0.15 /spl mu/m CMOS device 在低于0.15 /spl mu/m的CMOS器件上无边界触点漏电引起待机电流失效
D. Kim, J. Kim, B. Hwang, D. Cho, K. Kim, S.B. Kim, J. Hong, J. Park, M.Y. Lee
{"title":"Borderless contact leakage induced standby current failure on sub-0.15 /spl mu/m CMOS device","authors":"D. Kim, J. Kim, B. Hwang, D. Cho, K. Kim, S.B. Kim, J. Hong, J. Park, M.Y. Lee","doi":"10.1109/IPFA.2001.941478","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941478","url":null,"abstract":"For the downscaling of CMOS device design rules with high device performance, the reduced active area forces formation of a borderless contact in local interconnects. As the contact area is decreased with downscaling, it induces failure of device electrical characteristics and reliability. The ultra-shallow junction structures used as basic technology for sub-0.15 /spl mu/m CMOS devices and the junction leakage induced by borderless contact leakage at the shallow trench edge are serious problems for CMOS devices with low standby power dissipation. Recently, several borderless contact structures have been reported (Gallagher et al., 1995; Subbanna et al., 1993; Wen-Chau Liu et al., 2000). In this paper, we estimate the electrical characteristics of borderless contact and demonstrate the borderless contact leakage induced standby failure on a sub-0.15 /spl mu/m 6-Tr SRAM device.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131109863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction bipolar transistor 外延基硅锗异质结双极晶体管发射极结ESD可靠性研究
S. Voldman, L. Lanzerotti, R. Johnson
{"title":"Emitter base junction ESD reliability of an epitaxial base silicon germanium heterojunction bipolar transistor","authors":"S. Voldman, L. Lanzerotti, R. Johnson","doi":"10.1109/IPFA.2001.941460","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941460","url":null,"abstract":"With the growth of the high-speed data rate transmission, optical interconnect, and wireless marketplaces, heterojunction devices will play a central role in these communication systems. Heterojunction base-emitter design, bandgap engineering and technology scaling will each play a key role in the ability to achieve faster devices for the wired and wireless markets. As these structures are scaled, the sensitivity of these devices to electrostatic overstress (EOS), electrostatic discharge (ESD) and electromagnetic emissions (EMI) becomes a concern. Emitter-base design influences the ESD sensitivity and device performance of heterojunction bipolar transistor (HBT) devices. In this paper, the ESD sensitivity of the emitter-base junction of a SiGe HBT device is discussed. The evaluation of process variations and device design spacings on ESD robustness is evaluated for both positive and negative stress conditions as a function of the salicide location, emitter-base spacing, and collector opening.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126214977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Short failure analysis under fault isolation 故障隔离下的短故障分析
Z. Mai, M. Palaniappan, J. Chin, C. E. Soh, L.A. Knauss, E. Fleet
{"title":"Short failure analysis under fault isolation","authors":"Z. Mai, M. Palaniappan, J. Chin, C. E. Soh, L.A. Knauss, E. Fleet","doi":"10.1109/IPFA.2001.941486","DOIUrl":"https://doi.org/10.1109/IPFA.2001.941486","url":null,"abstract":"Scanning superconducting quantum interference device (SQUID) microscopy, along with real time X-ray (RTX) microscopy and scanning acoustic microscopy (SAM), was used as a fault isolation tool for IC short circuit failure analysis. Fault isolation was carried out before physical analysis. Experimental procedures and results for both fault isolation and physical analysis are given in detail.","PeriodicalId":297053,"journal":{"name":"Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116771691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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