薄栅氧化物准击穿的双极电流应力和电恢复

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941455

W. Loh, B. Cho, M. Li

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引用次数: 0

摘要

研究了双极恒流应力作用下薄栅氧化物的准击穿机理。观察到准击穿(QB)存在两个不同的阶段，其特征是电可恢复性。在第一阶段或可恢复阶段，通过施加适当的反向偏压，可以将QB后的泄漏电流恢复到SILC水平。然而，在第二阶段或不可恢复阶段，没有观察到电恢复。利用载流子分离和DCIV技术研究了QB的传导机理。

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Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

The quasi-breakdown mechanism (QB) of thin gate oxides is investigated under bipolar constant current stressing. It was observed that there exist two distinct stages in quasi-breakdown (QB), characterized by their electrical recoverability. In the first or recoverable stage, leakage current after QB could be recovered to the SILC level by applying proper reverse bias. In the second or unrecoverable stage, however, no electrical recovery is observed. Conduction mechanisms at QB were also studied using carrier separation and DCIV techniques.

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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