2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)最新文献

A Novel Technique of Enhancing CMRR of Fully- Differential Instrumentation Amplifier Using High Gain CMFB Loop 一种利用高增益CMFB环路提高全差分仪表放大器CMRR的新技术

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032884

R. Sahu, S. Kundu, Alok Kumar

{"title":"A Novel Technique of Enhancing CMRR of Fully- Differential Instrumentation Amplifier Using High Gain CMFB Loop","authors":"R. Sahu, S. Kundu, Alok Kumar","doi":"10.1109/EDKCON56221.2022.10032884","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032884","url":null,"abstract":"In this paper, the enhancement of the common- mode rejection ratio (CMRR) of a fully-differential capacitively-coupled chopper instrumentation amplifier (CCIA) used for biomedical signal acquisition system is proposed. To achieve the gain accuracy of the instrumentation amplifier (INA) high gain multi-stage fully-differential operational amplifier (Op-Amp) has been used as the building block. The enhancement of the CMRR is achieved by using common-mode feedback (CMFB) circuit with very high loop gain. The high CMFB loop gain has been achieved by suitable selection of the CMFB circuit and the connection of the CMFB circuit to the multi-stage Op-Amp. The entire circuit has been designed using 180 nm technology with 1.8 V supply. The designed multi-stage Op-Amp has a low-frequency differential mode (A ) and common mode ( ) gain of 123.5 dB and - 105.02 dB, respectively, using a CMFB loop having a gain of 136.3 dB. Using this Op-Amp the designed CCIA achieves a CMRR as high as 145.1 dB with Ad of 40 dB @3dB bandwidth of 10.38 KHz. Finally, the response of the CCIA has been compared with some of the state-of-art designs.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116979758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Analysis of RTL to GDS-II Flow in Opensource Tool Qflow and Commercial Tool Cadence Encounter for Synchronous FIFO 同步FIFO的开源工具Qflow和商用工具Cadence Encounter中RTL到GDS-II流的性能分析

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032906

Deep Acharya, U. Mehta

{"title":"Performance Analysis of RTL to GDS-II Flow in Opensource Tool Qflow and Commercial Tool Cadence Encounter for Synchronous FIFO","authors":"Deep Acharya, U. Mehta","doi":"10.1109/EDKCON56221.2022.10032906","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032906","url":null,"abstract":"Open-source tool Qflow is a toolchain that comprises of popular and efficient tool which is used to perform RTL to GDS-II flow for digital designs. Students and researchers can use this open-source tool for their projects and get an idea about the actual physical design flow. A commercial tool like Cadence Encounter requires a high-cost license for chip design. So, it is generally used by the industry for good efficiency and higher accuracy. Here, the RTL to GDS-II flow is performed for Synchronous FIFO. In Synchronous FIFO, both read and write operations are operated with a single clock. This study illustrates the RTL to GDS-II flow of Synchronous FIFO using the open-source tool Qflow and Cadence Encounter. The entire RTL to GDS-II flow for the synchronous FIFO is carried out for the 180nm technology. Both tools use different foundries for standard cells and PDKs. The design’s performance is compared based on the highest operating frequency, area requirements, and power requirement. As a result, the number of cells required in the case of the Qflow tool is 1.5x greater than in the case of Cadence Encounter. The area requirement of the Qflow design is more than 2.6x that of Cadence Encounter.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121035020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

VLSI and AES based IoT security by Modified Random S- Box Generation 基于VLSI和AES的物联网安全改进随机S盒生成

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032902

Indrajit Das, Kashmira Jha, Papiya Debnath, Subhrapratim Nath

{"title":"VLSI and AES based IoT security by Modified Random S- Box Generation","authors":"Indrajit Das, Kashmira Jha, Papiya Debnath, Subhrapratim Nath","doi":"10.1109/EDKCON56221.2022.10032902","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032902","url":null,"abstract":"The next phase of the digital revolution is the Internet of Things (IoT), which refers to the scenario in which billions of people and objects are interconnected to permit the flow of enormous volumes of information from many locations. This development is due to the extraordinary expansion in Integrated circuit and sensor technology. IoT’s data transit phases have some security issues with data confidentiality. Along with some benefits and its high usage, some complexity issues arise in form of numerous forms. Thus, a security system is suggested in this research paper that tackles the aforementioned difficulties in order to improve reliable information transmission in a smart IoT scenario with low power consumption, throughout information sending among an IoT system and a cloud server using revised Advance Encryption Standard with random S- Box which is generated by various (nine) irreducible polynomial GF (28) in finite field techniques. In the revised S- Box generation, this research aims to optimize the VLSI circuit design of the SubBytes and inverse SubBytes procedures. To achieve this, all of the building blocks in the modified random S-box transformation are done by finite field arithmetic. For further improvement of the area performance, a blended design of modified S-boxes and inverse S-boxes is suggested where on each occasion a different irreducible polynomial is utilized in the finite field of GF (28) and this irreducible polynomial and secret key is sent to the receiver. As a result, a random S-Box is formed and thereby the algorithm's security is improved.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125124674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the Linearity Behavior of Dual Gate Junction less MOSFET with high-K Gate Stack at Cryogenic Temperatures 低温下高k栅极堆无双栅结MOSFET的线性特性研究

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032911

Ananya Karmakar, R. Ghosh, Priyanka Saha

引用次数: 0

Interlayer twist angle-dependent electronic structure and optical properties of InSe/WTe2 van der Waals heterostructure InSe/WTe2范德华异质结构层间扭角相关的电子结构和光学性质

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032930

S. Chowdhury, P. Venkateswaran, D. Somvanshi

引用次数: 1

An Overview of Artificial Neuromorphic Circuits 人工神经形态电路综述

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032851

M. Santhoshi, S. Barma, Debaprasad Das

引用次数: 0

Macaroni Channel-Nanowire-Field Effect Transistor (MC-NW-FET) for Gate Induced Drain Leakage (GIDL) Reduction Application 通心粉通道-纳米线场效应晶体管(MC-NW-FET)用于栅极感应漏极(GIDL)减少应用

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032964

Aapurva Kaul, Sonam Rewari, Deva Nand

引用次数: 0

Design of a linearized operational transconductance amplifier using quasi-floating bulk resistor 采用准浮动体电阻的线性化跨导运算放大器的设计

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032960

Pragati Kharbanda, Riya Bakshi, K. Sharma

引用次数: 0

Design of CMUT Cells for High-intensity Focused Ultrasound Applications 用于高强度聚焦超声应用的CMUT细胞设计

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032962

A. Ray, S. Sinha, F. Haque

引用次数: 0

Structural Asymmetry related Nonlinear Mobility of Electron in InxGa1-xAs/GaAs Quantum well FET InxGa1-xAs/GaAs量子阱场效应管中与电子非线性迁移率相关的结构不对称

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032871

S. R. Panda, M. Pradhan, T. Sahu, A. K. Panda

引用次数: 0