通心粉通道-纳米线场效应晶体管(MC-NW-FET)用于栅极感应漏极(GIDL)减少应用

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032964

Aapurva Kaul, Sonam Rewari, Deva Nand

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引用次数: 0

摘要

在这项工作中，我们提出并研究了一种新型的通心粉通道-纳米线场效应晶体管(MCNW-FET)，用于减少栅极诱发漏极(GIDL)的应用。MC-NW-FET与传统的纳米线器件(NW-FET)进行了比较。本文对GIDL进行了研究，推导出MC-NW-FET的GIDL随带间隧穿减小而减小。MC-NWFET中的GIDL电流降低，表明该器件可防止泄漏和更高的离子/IOFF，表明数字应用更具可用性。根据本文的模拟结果，MC-NW-FET的GIDL电流从10-10A降低到10-13A，并且MC-NW-FET的ION/IOFF比NW-FET高771倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Macaroni Channel-Nanowire-Field Effect Transistor (MC-NW-FET) for Gate Induced Drain Leakage (GIDL) Reduction Application

In this work we have proposed and examined a novel Macaroni Channel-Nanowire Field Effect Transistor (MCNW-FET) for Gate-Induced Drain Leakage (GIDL) reduction applications. MC-NW-FET is compared with a conventional nanowire device (NW-FET). In this paper, GIDL is explored, and it is deduced that GIDL decreases in MC-NW-FET when band to band tunnelling is reduced. As GIDL current lowers in MC-NWFET, suggesting that the device is insulated against leakages and higher ION/IOFF indicating more usability for digital applications. According to the simulated results of the paper, GIDL current has been decreased from 10-10A to 10-13A in MC-NW-FET and the ION/IOFF ratio of MC-NW-FET is 771 times greater than NW-FET.

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来源期刊

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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