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2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)最新文献

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Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET) 量子点单电子晶体管(SET)温度相关电学特性的建模
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032903
Ankit Kumar, Siddhi, Sourav Kumar Pandey, Koushik Ghosh, J. Sanyal, S. Bhattacharya
{"title":"Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET)","authors":"Ankit Kumar, Siddhi, Sourav Kumar Pandey, Koushik Ghosh, J. Sanyal, S. Bhattacharya","doi":"10.1109/EDKCON56221.2022.10032903","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032903","url":null,"abstract":"In the context of the rapid development of electronic circuits and systems, Single Electronics Transistor (SET) play an important role in allowing the enhancement of system performance and capabilities. In this work, the characteristic of Si-based SET is simulated. The oscillations observed in characteristic plots indicate that the operation of SET is influenced by the dimension of quantum dots, electron tunneling, and column blocked effects. Further, the study is extended to compare the simulation results for different temperature and study the influence of temperature on electrical characteristic. Such structural modeling of SET illustrates a solution for scaling up electrical characteristics of the device, which further enhances the performance of SET devices in nanoscale regimes.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128046601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reactive Oxygen Species (ROS) Sensing- A Nanoscale Transistorized Approach 活性氧(ROS)传感-纳米级晶体管方法
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032914
Soumik Podder, Sunipa Roy
{"title":"Reactive Oxygen Species (ROS) Sensing- A Nanoscale Transistorized Approach","authors":"Soumik Podder, Sunipa Roy","doi":"10.1109/EDKCON56221.2022.10032914","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032914","url":null,"abstract":"Reactive oxygen species (ROS) when under physiological equilibrium (equal production of in vivo antioxidants) controls the cellular signalling but due to non equilibrium in metabolism and respiration burst excess ROS are produced that has deleterious effect on human health. The elevated ROS level puts signatory contribution on cardiovascular, neurodegenerative diseases, inflammation, cancer cell proliferation etc. Therefore detection of ROS is important for healthy being. Thus the detection of ultra low ROS is a challenging issue. Field Effect Transistor based ROS detection provides accurate and ultra- measurement of sensitivity. This present review enumerates the evolution of different FET especially organic field effect transistor (OFET) based ROS sensor in a systematic approach. The review work will be helpful to researchers to find out the drawbacks of present FET based ROS sensor and to develop efficient sensor for theranostic applications.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115963354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Novel Z-shaped Gate TFET with Improved Device Characteristics 改进器件特性的新型z形栅极TFET的研究
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032892
Tammisetti Ashok, C. Pandey
{"title":"Investigation of Novel Z-shaped Gate TFET with Improved Device Characteristics","authors":"Tammisetti Ashok, C. Pandey","doi":"10.1109/EDKCON56221.2022.10032892","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032892","url":null,"abstract":"This paper proposes a novel Z-shaped gate TFET (ZG-TFET) to enhance the device switching characteristics. The gate terminal is elevated above the N+ pocket region to amplify the electric filed at source-pocket interface. In addition to this, the elevated gate terminal initiates the line tunneling to be occurred in both vertical and lateral direction of the source-pocket interface, which eventually improves the BTBT rate of charges into the channel region of ZG-TFET. The proper optimization of doping concentration and thickness of N+ pocket reduces the tunneling barrier-width at source/channel interface and thereby, increases ION (1.19×10-6A/µm at Vgs=1.2V). As per the obtained TCAD simulation results, the proposed device achieves approximately one order increment in ION, two order increment ION /IOFF ratio and twenty percent improvement in SS as compared to conventional L-shaped TFET. Hence, improvement in switching characteristics helps the proposed ZG-TFET to become more suitable for digital circuit applications.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130439176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and Simulation of 7% Efficient Lead-Free Perovskite Single Junction Solar Cell 7%高效无铅钙钛矿单结太阳能电池的设计与仿真
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032901
Nikhil Shrivastav, Savita Kashyap, R. Pandey, Jaya Madan
{"title":"Design and Simulation of 7% Efficient Lead-Free Perovskite Single Junction Solar Cell","authors":"Nikhil Shrivastav, Savita Kashyap, R. Pandey, Jaya Madan","doi":"10.1109/EDKCON56221.2022.10032901","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032901","url":null,"abstract":"Due to the low cost, low-temperature coefficient, direct bandgap, long-term stability, and high absorption coefficient, lead-free perovskite materials are the most promising materials for solar cell. Thus, in this work, a single-junction solar cell based on cesium tin-germanium triiodide solid solution perovskite (CsSn<inf>0.5</inf>Ge<inf>0.5</inf>I<inf>3</inf>) material (1.5 eV) has been used to design solar cell. To assist the light generated charge carrier flow PCBM: C<inf>60</inf> and Spiro-OMeTAD are utilized as ETL and HTL respectively. Using the SCAPS-1D tool, the cell is tuned for maximum conversion efficiency (7%) by collectively adjusting the thickness and donor density of the perovskite (CsSn<inf>0.5</inf>Ge<inf>0.5</inf>I<inf>3</inf>) layer.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133352023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Interpreting Sensing Behavior of MoS2 Nanoflower Based Liquid Phase BTX Sensor Employing DFT Study 基于DFT研究的二硫化钼纳米花液相BTX传感器传感行为
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032830
Bikramdeb Chakraborty, M. Akhtar, P. Bhattacharyya
{"title":"Interpreting Sensing Behavior of MoS2 Nanoflower Based Liquid Phase BTX Sensor Employing DFT Study","authors":"Bikramdeb Chakraborty, M. Akhtar, P. Bhattacharyya","doi":"10.1109/EDKCON56221.2022.10032830","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032830","url":null,"abstract":"Owing to the harmful and toxic nature of the aromatic hydrocarbons such as benzene, toluene and xylene (BTX), developing a sensor to detect those volatile organic compounds (VOCs) has become prevalent in modern times. In this paper hydrothermally derived molybdenum di-sulfide (MoS2) nanoflower based sensor was developed and liquid phase sensing study was carried out towards above-mentioned target VOCs. In order to investigate the sensing behavior, DFT based simulation study was also carried out. Lower adsorption energy, larger charge transfer and less binding distance for xylene towards MoS2 made it most favorable for adsorption among the three VOCs. Experimental data also showed superior sensing performance of xylene correlated with DFT based findings.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132707534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smart IoT based Early Stage Drowsy Driver Detection Management System 基于智能物联网的早期疲劳驾驶检测管理系统
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032950
J. Samadder, J. Das, Diptangshu Das, Rakesh Sadhukhan, A. Parvin
{"title":"Smart IoT based Early Stage Drowsy Driver Detection Management System","authors":"J. Samadder, J. Das, Diptangshu Das, Rakesh Sadhukhan, A. Parvin","doi":"10.1109/EDKCON56221.2022.10032950","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032950","url":null,"abstract":"This study aimed to develop an innovative alert management system for creating smart cars that detect drowsy driving and prevent it automatically. However, sleepiness is a common physiological occurrence in humans that can occur for various reasons. To prevent the accident's cause, a reliable management system must be designed. In this suggested work, it is proposed that a drowsy driver warning system was created utilising a method where the Video Stream Processing (VSP) used an Eye Aspect Ratio (EAR) and Euclidean distance of the eye to study the eye blink concept. The facial landmark method is also used to distinguish eyes with accuracy. The IoT module delivers a warning message with collision incidence and position information, alarms via voice speaking, and notifies nearby traffic/the owner of the car over the Raspberry Pi tracking system when the driver's fatigue is detected. The suggested model excels in that it can identify tiredness in both daytime and nighttime vision with obstacles at different distances with an accuracy greater than 98%.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":" 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120831573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab Initio Study on Stability, Electronic and Optical Properties of Monolayer Mo1−xWxSe2 Alloys 单层Mo1−xWxSe2合金稳定性、电子和光学性能的从头算研究
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032865
Sheikh Mohd. Ta-Seen Afrid, Swagata Goswami Utsha, A. Zubair
{"title":"Ab Initio Study on Stability, Electronic and Optical Properties of Monolayer Mo1−xWxSe2 Alloys","authors":"Sheikh Mohd. Ta-Seen Afrid, Swagata Goswami Utsha, A. Zubair","doi":"10.1109/EDKCON56221.2022.10032865","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032865","url":null,"abstract":"Due to their unique structures and physical properties, monolayer transition metal dichalcogenides (TMDs) have gained attention in nanoelectronic and flexible device applications. We investigated the effect of alloying on stability, electronic and optical properties of two–dimensional TMD alloys by exploring Mo1−xWxSe2. Using density–functional theory (DFT) calculations, we evaluated geometrical structures, electronic band structures, the contributions from atomic orbitals in both valence and conduction bands, Bader charge analysis, effective mass, mobility, dynamic stability, dielectric functions, and absorption coefficient for varying compositions in Mo1−xWxSe2 alloy. Our investigation revealed that the direct band gap in these alloys could be modulated with nonlinear dependency on composition. The effective mass and mobility of both hole and electron can be varied notably for different composition of alloys. Mo1−xWxSe2 alloys were energetically and dynamically stable. Furthermore, the high optical absorption of the alloys can be utilized in optoelectronic devices. The findings of this study enlighten the tunable electronic and optical properties of TMD alloys that will be beneficial for designing nanophotonic and nanoelectronic devices.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116489005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Impact of Glancing Angle Deposition Technique on the Performance of SnS Thin Film Solar Cell: SCAPS-1D simulation 掠射角沉积技术对SnS薄膜太阳能电池性能的影响:SCAPS-1D模拟
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032877
Shivani Gohri, Jaya Madan, R. Pandey
{"title":"Impact of Glancing Angle Deposition Technique on the Performance of SnS Thin Film Solar Cell: SCAPS-1D simulation","authors":"Shivani Gohri, Jaya Madan, R. Pandey","doi":"10.1109/EDKCON56221.2022.10032877","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032877","url":null,"abstract":"Thin film materials are outstanding in the field of solar cells because of their low cost and good performance. One such material is SnS, which has higher absorption coefficient and earth richness. However, to date, the efficiency of thin-film solar cells has not been up to date, which limits their potential use in the PV market. In this paper, we design and simulate an efficient SnS based solar cell using glancing angle deposition (GLAD) technique, by which the deposition angle of SnS can be altered. In this regard, CZTSSe based SnS solar cell which has 7.83% efficiency reported in our previous paper is used in this work to further increase the efficiency of SnS solar cells. The performance of SnS solar cell for 0° ,45°, 55°, 65°, 75°, 85° deposition angles of SnS is calculated using the SCAPS-1D simulator. The optimized results are obtained at 85° deposition angle of SnS. At this angle the VOC and JSC obtained are 0.66 V and 27.98 mA/cm2 respectively. Also, the efficiency achieved by this solar cell is 12.17%. The results obtained in this paper will open a path for the fabrication and development of SnS based solar cells.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126192525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Two dimensional modeling of dual material double gate TFET in stacked hetero-dielectrics with split high-K materials 双材料双栅TFET在高k材料叠层异质介质中的二维建模
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032942
Dipshika Das, Pradip Kumar Ghosh, Rudra Sankar Dhar
{"title":"Two dimensional modeling of dual material double gate TFET in stacked hetero-dielectrics with split high-K materials","authors":"Dipshika Das, Pradip Kumar Ghosh, Rudra Sankar Dhar","doi":"10.1109/EDKCON56221.2022.10032942","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032942","url":null,"abstract":"this article develops the analytical modelling of a dual material double gate TFET including gate engineering using a hetero–dielectric gate stack with split high K dielectrics. The parabolic approximation method of charge potential is used to solve 2D Poisson equation. The dielectric stack of gate consists of SiO2 and split high–K materials. The study incorporates the effect of various high-K dielectrics stacked above dielectric and find its influences on band to band tunneling, OFF and ON currents, energy band bending and drain currents. It is evident that the proposed device structure offers a low OFF current (10-17 A/µm) and enhances the ON current. The numerical results are simulated using SILVACO ATLAS simulation software.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124891841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Bio-Material Based Write-Once-Read-Many Times Memory Using Sodium Caseinate and Polyvinylpyrrolidone Blend 用酪蛋白酸钠和聚乙烯吡咯烷酮混合制备基于生物材料的写一次读多次存储器
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI: 10.1109/EDKCON56221.2022.10032847
M. Saha, S. Dey, A. Mallik
{"title":"A Bio-Material Based Write-Once-Read-Many Times Memory Using Sodium Caseinate and Polyvinylpyrrolidone Blend","authors":"M. Saha, S. Dey, A. Mallik","doi":"10.1109/EDKCON56221.2022.10032847","DOIUrl":"https://doi.org/10.1109/EDKCON56221.2022.10032847","url":null,"abstract":"Bio-material based memory devices have envinced enormous interests among the researchers in recent years due to its simple, low cost and less toxic device fabrication methodology. Moreover, such devices are bio-degradable and found to exhibit impressive data storage capabilities and high device flexibility. Here, we have fabricated a Write-Once-Read-Many (WORM) times memory based on natural casein, which is processed from edible animal milk. The casein obtained was solution-processed to produce water soluble sodium caseinate (NaCas), which is a salt of casein, and then blended with polyvinylpyrrolidone (PVP). Silver (Ag) was used as the top electrode and ITO coated PET substrate as the bottom electrode. The device has shown good data retention of more than 17 days and a cyclic endurance of 100 cycles. Moreover, the SET voltage for our Ag/NaCas-PVP/ITO-PET device is less than 1 V, thus making the device suitable for low power, long term and environment friendly memory application.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129408820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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