Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET)

Ankit Kumar, Siddhi, Sourav Kumar Pandey, Koushik Ghosh, J. Sanyal, S. Bhattacharya
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Abstract

In the context of the rapid development of electronic circuits and systems, Single Electronics Transistor (SET) play an important role in allowing the enhancement of system performance and capabilities. In this work, the characteristic of Si-based SET is simulated. The oscillations observed in characteristic plots indicate that the operation of SET is influenced by the dimension of quantum dots, electron tunneling, and column blocked effects. Further, the study is extended to compare the simulation results for different temperature and study the influence of temperature on electrical characteristic. Such structural modeling of SET illustrates a solution for scaling up electrical characteristics of the device, which further enhances the performance of SET devices in nanoscale regimes.
量子点单电子晶体管(SET)温度相关电学特性的建模
在电子电路和系统快速发展的背景下,单电子晶体管(SET)在提高系统性能和能力方面发挥着重要作用。本文对硅基SET的特性进行了仿真。在特征图中观测到的振荡表明,SET的运行受到量子点尺寸、电子隧穿和柱阻塞效应的影响。在此基础上,对不同温度下的仿真结果进行了比较,研究了温度对电特性的影响。这种对SET的结构建模说明了一种放大器件电特性的解决方案,从而进一步提高了SET器件在纳米尺度下的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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