Ankit Kumar, Siddhi, Sourav Kumar Pandey, Koushik Ghosh, J. Sanyal, S. Bhattacharya
{"title":"Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET)","authors":"Ankit Kumar, Siddhi, Sourav Kumar Pandey, Koushik Ghosh, J. Sanyal, S. Bhattacharya","doi":"10.1109/EDKCON56221.2022.10032903","DOIUrl":null,"url":null,"abstract":"In the context of the rapid development of electronic circuits and systems, Single Electronics Transistor (SET) play an important role in allowing the enhancement of system performance and capabilities. In this work, the characteristic of Si-based SET is simulated. The oscillations observed in characteristic plots indicate that the operation of SET is influenced by the dimension of quantum dots, electron tunneling, and column blocked effects. Further, the study is extended to compare the simulation results for different temperature and study the influence of temperature on electrical characteristic. Such structural modeling of SET illustrates a solution for scaling up electrical characteristics of the device, which further enhances the performance of SET devices in nanoscale regimes.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the context of the rapid development of electronic circuits and systems, Single Electronics Transistor (SET) play an important role in allowing the enhancement of system performance and capabilities. In this work, the characteristic of Si-based SET is simulated. The oscillations observed in characteristic plots indicate that the operation of SET is influenced by the dimension of quantum dots, electron tunneling, and column blocked effects. Further, the study is extended to compare the simulation results for different temperature and study the influence of temperature on electrical characteristic. Such structural modeling of SET illustrates a solution for scaling up electrical characteristics of the device, which further enhances the performance of SET devices in nanoscale regimes.