Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET)

Abstract

In the context of the rapid development of electronic circuits and systems, Single Electronics Transistor (SET) play an important role in allowing the enhancement of system performance and capabilities. In this work, the characteristic of Si-based SET is simulated. The oscillations observed in characteristic plots indicate that the operation of SET is influenced by the dimension of quantum dots, electron tunneling, and column blocked effects. Further, the study is extended to compare the simulation results for different temperature and study the influence of temperature on electrical characteristic. Such structural modeling of SET illustrates a solution for scaling up electrical characteristics of the device, which further enhances the performance of SET devices in nanoscale regimes.