Macaroni Channel-Nanowire-Field Effect Transistor (MC-NW-FET) for Gate Induced Drain Leakage (GIDL) Reduction Application

Abstract

In this work we have proposed and examined a novel Macaroni Channel-Nanowire Field Effect Transistor (MCNW-FET) for Gate-Induced Drain Leakage (GIDL) reduction applications. MC-NW-FET is compared with a conventional nanowire device (NW-FET). In this paper, GIDL is explored, and it is deduced that GIDL decreases in MC-NW-FET when band to band tunnelling is reduced. As GIDL current lowers in MC-NWFET, suggesting that the device is insulated against leakages and higher ION/IOFF indicating more usability for digital applications. According to the simulated results of the paper, GIDL current has been decreased from 10-10A to 10-13A in MC-NW-FET and the ION/IOFF ratio of MC-NW-FET is 771 times greater than NW-FET.