2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)最新文献_第6页

Landing Radar Technology at the Jet Propulsion Laboratory: Mars Science Laboratory and Beyond 着陆雷达技术在喷气推进实验室:火星科学实验室和超越

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340111

B. Pollard

引用次数: 0

Toward Millimeter-Wave DACs: Challenges and Opportunities 迈向毫米波dac:挑战与机遇

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340078

W. Khalil, J. Wilson, B. Dupaix, S. Balasubramanian, G. Creech

{"title":"Toward Millimeter-Wave DACs: Challenges and Opportunities","authors":"W. Khalil, J. Wilson, B. Dupaix, S. Balasubramanian, G. Creech","doi":"10.1109/CSICS.2012.6340078","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340078","url":null,"abstract":"As line widths in emerging III-V technologies approaching that of modern CMOS, the conception of high performance mixed signal designs such as digital to analog converters (DACs) in the mm-wave space becomes possible. While addressing the speed limitations, candidate III-Vs (InP, GaAs and GaN) are known to suffer from increased switching power consumption, limited device yield and absolute accuracy. CMOS, on the other hand, has the benefit of low-power digital switching, fine resolution and scalability. Recent attempts in marrying the two technologies have been carried out in the DARPA COSMOS program, by integrating III-V type devices with CMOS circuits, so as to exploit the advantages of low-power digital CMOS and high-speed high-power InP. This paper presents some of the challenges as well as prospects in designing record speed and performance DACs in the COSMOS program while contrasting it to that of deeply-scaled CMOS. A multi-phase parallel DAC architecture is leveraged for ultra-wideband synthesis, to improve noise performance and achieve higher information rates. The architectural bounds between CMOS and InP as well as detailed circuit-level analysis of critical block elements will be highlighted.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132735809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology 高IIP3, 50 GSamples/s跟踪和保持放大器在0.25µm InP HBT技术

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340112

S. Daneshgar, Z. Griffith, M. Rodwell

引用次数: 6

Doherty Power Amplifier Design in Gallium Nitride Technology Using a Nonlinear Vector Network Analyzer and X-Parameters 基于非线性矢量网络分析仪和x参数的氮化镓技术Doherty功率放大器设计

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340105

T. Nielsen, M. Dieudonne, C. Gillease, D. Root

引用次数: 13

A Watt-Class Digital Transmitter with a Voltage-Mode Class-S Power Amplifier and an Envelope Delta-Sigma Modulator for 450 MHz Band 瓦特级数字发射机，具有电压模式s类功率放大器和450 MHz频段的包络Delta-Sigma调制器

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340086

S. Hori, A. Wentzel, M. Hayakawa, W. Heinrich, K. Kunihiro

引用次数: 10

A High Efficiency 780 MHz GaN Envelope Tracking Power Amplifier 高效780 MHz GaN包络跟踪功率放大器

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340093

J. Yan, P. Theilmann, D. Kimball

引用次数: 16

100 Gb/s Optical DP-QPSK Using Two Surface Mount Dual Channel Modulator Drivers 100gb /s光DP-QPSK采用两个表面贴装双通道调制器驱动器

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340054

C. Steinbeiser, K. Dinh, A. Chiu, M. Coutant, O. Krutko, M. Tessaro

引用次数: 2

Deeply-Scaled E/D-Mode GaN-HEMTs for Sub-mm-Wave Amplifiers and Mixed-Signal Applications 用于亚毫米波放大器和混合信号应用的深度缩放E/ d模式gan - hemt

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340075

K. Shinohara, D. Regan, A. Corrion, D. Brown, I. Alvarado-Rodoriguez, M. Cunningham, C. Butler, A. Schmitz, S. Kim, B. Holden, D. Chang, V. Lee, P. Asbeck

{"title":"Deeply-Scaled E/D-Mode GaN-HEMTs for Sub-mm-Wave Amplifiers and Mixed-Signal Applications","authors":"K. Shinohara, D. Regan, A. Corrion, D. Brown, I. Alvarado-Rodoriguez, M. Cunningham, C. Butler, A. Schmitz, S. Kim, B. Holden, D. Chang, V. Lee, P. Asbeck","doi":"10.1109/CSICS.2012.6340075","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340075","url":null,"abstract":"In this paper, we report state-of-the-art high-frequency performance of GaN-based HEMTs achieved through innovative device scaling technologies such as vertically-scaled AlN/GaN/AlGaN double-heterojunction (DH) HEMT epitaxial structure, low-resistance n+-GaN ohmic contacts regrown by MBE, and manufacturable 20-nm self-aligned sidewall gate process. Engineering top barrier layer structure enabled both enhancement- and depletion-mode (E/D) device operations with record cutoff frequencies while maintaining Johnson figure of merit (JFoM) breakdown performance. Furthermore, E/D-mode devices were monolithically integrated using a full epitaxial regrowth technique with a successful demonstration of DCFL ring oscillator circuits. Deeply-scaled E/D-mode GaN-HEMTs with an unprecedented combination of high-frequency and high-breakdown characteristics offer practical advantages in circuit applications such as sub-millimeter-wave power amplifiers, ultra-linear mixers, and increased output power digital-to-analog converters.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121012158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A 60 GHz Variable Gain Amplifier with a Low Phase Imbalance in 0.18 μm SiGe BiCMOS Technology 基于0.18 μm SiGe BiCMOS技术的60 GHz低相位不平衡变增益放大器

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340101

C. Byeon, I. Song, S. Cho, H. Kim, C. Lee, C. Park

引用次数: 9

Determination of the Reliability of AlGaN/GaN HEMTs through Trap Detection Using Optical Pumping 利用光泵浦陷阱检测测定AlGaN/GaN hemt的可靠性

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340104

D. Cheney, R. Deist, J. Navales, B. Gila, F. Ren, S. Pearton

{"title":"Determination of the Reliability of AlGaN/GaN HEMTs through Trap Detection Using Optical Pumping","authors":"D. Cheney, R. Deist, J. Navales, B. Gila, F. Ren, S. Pearton","doi":"10.1109/CSICS.2012.6340104","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340104","url":null,"abstract":"When illuminated with below band-gap light, the response of the drain current of AlGaN/GaN High Electron Mobility Transistors (HEMTs) was measured. The energy of the wavelength of light corresponds to the trapping and de-trapping of carriers within the band-gap, providing an indicator of trap densities. These changes were compared on HEMTs with gate lengths of 0.14 & 0.17 μm, before and after electrically stressing under on-state (VG = 0 V), off-state (VG =-5 V), and typical operating conditions (VG = -2V) indicating a change in trap density as a result of electrical stressing, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source. Changes in trap densities were minimal after both off-state and on-state stressing but significant trap creation in the range EC=-0.4-0.6 eV were observed in HEMTs exhibiting gradual degradation during stressing. Energy levels corresponding to these values in the literature have been suggested to correlate GaN and NGa substitutional defects, as well as GaI interstitials.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127946015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2