{"title":"高IIP3, 50 GSamples/s跟踪和保持放大器在0.25µm InP HBT技术","authors":"S. Daneshgar, Z. Griffith, M. Rodwell","doi":"10.1109/CSICS.2012.6340112","DOIUrl":null,"url":null,"abstract":"A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology\",\"authors\":\"S. Daneshgar, Z. Griffith, M. Rodwell\",\"doi\":\"10.1109/CSICS.2012.6340112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.\",\"PeriodicalId\":290079,\"journal\":{\"name\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"214 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2012.6340112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology
A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with -5 V and -2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of -30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.
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