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Short-Millimeter-Wave CMOS Design for Ultrahigh-Speed Wireless Communication 超高速无线通信中的短毫米波CMOS设计
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-12-01 DOI: 10.1109/APMC.2012.6421512
M. Fujishima
{"title":"Short-Millimeter-Wave CMOS Design for Ultrahigh-Speed Wireless Communication","authors":"M. Fujishima","doi":"10.1109/APMC.2012.6421512","DOIUrl":"https://doi.org/10.1109/APMC.2012.6421512","url":null,"abstract":"Recently, short-distance high-speed wireless communication using a 60 GHz band has been studied for mobile application. To realize higher-speed wireless communication while maintaining low power consumption for mobile application, however, a short-millimeter-wave band (more than 100 GHz) is used since it can potentially provide a wider frequency band. Thus, we have studied D-band (110 - 170 GHz) CMOS circuits to realize low-power ultrahigh-speed wireless communication. In the short-millimeter-wave band, since only an insufficient device model is provided, research has to start from device modeling. In this paper, our studies of modeling and design for D-band CMOS circuits are described. Finally, a 10 Gbps, 135 GHz wireless transceiver with a power consumption of 98 mW is demonstrated.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124659299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Diamond Materials for GaN HEMT near Junction Heat Removal 用于GaN HEMT近结热去除的金刚石材料
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340119
R. Sandhu, V. Gambin, B. Poust, I. Smorchkova, G. Lewis, R. Elmadjian, D. Li, C. Geiger, B. Heying, M. Wojtowicz, A. Oki, T. Feygelson, K. Hobart, E. Bozorg-Grayeli, K. Goodson
{"title":"Diamond Materials for GaN HEMT near Junction Heat Removal","authors":"R. Sandhu, V. Gambin, B. Poust, I. Smorchkova, G. Lewis, R. Elmadjian, D. Li, C. Geiger, B. Heying, M. Wojtowicz, A. Oki, T. Feygelson, K. Hobart, E. Bozorg-Grayeli, K. Goodson","doi":"10.1109/CSICS.2012.6340119","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340119","url":null,"abstract":"Summary form only given. GaN HEMT technology is transforming applications in communications, radar, and electronic warfare by offering more than 5x higher RF transmit power over the existing GaAs-based technologies. The high breakdown voltage and current handling capability of GaN HEMTs enables, for the same device size, a 10x increase in RF power using GaN-based devices in place of conventional GaAs-based devices. However the ultimate power and performance of GaN technology cannot be exploited in real applications due to thermal limitations on performance and reliability. The high power density in GaN HEMTs translates to mega-Watts/cm2 heat dissipation at the device gate region. Increasing the heat conductance near the GaN device junction is critical to reduce device junction temperature for reliable operation and performance. NGAS will report on revolutionary methods being developed to directly integrate high quality, high thermal conductivity diamond materials with more than 4x greater thermal conductivity over existing state-of-the-art GaN HEMT technology.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124396839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier 全ETSI e波段倍频器，四倍频器和24 dBm功率放大器
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340084
Melissa C. Rodriguez, J. Tarazi, A. Dadello, E. Convert, M. G. McCulloch, S. Mahon, S. Hwang, Rodney G. Mould, A. Fattorini, A. C. Young, J. Harvey, A. Parker, M. Heimlich, Wen-Kai Wang
{"title":"Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier","authors":"Melissa C. Rodriguez, J. Tarazi, A. Dadello, E. Convert, M. G. McCulloch, S. Mahon, S. Hwang, Rodney G. Mould, A. Fattorini, A. C. Young, J. Harvey, A. Parker, M. Heimlich, Wen-Kai Wang","doi":"10.1109/CSICS.2012.6340084","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340084","url":null,"abstract":"A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121818314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 20 GHz Low Phase Noise Signal Source Using VCO and Mixer in InGaP/GaAs HBT InGaP/GaAs HBT中使用压控振荡器和混频器的20 GHz低相位噪声信号源
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340056
S. Lai, M. Bao, D. Kuylenstierna, H. Zirath
{"title":"A 20 GHz Low Phase Noise Signal Source Using VCO and Mixer in InGaP/GaAs HBT","authors":"S. Lai, M. Bao, D. Kuylenstierna, H. Zirath","doi":"10.1109/CSICS.2012.6340056","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340056","url":null,"abstract":"This paper presents a low phase noise 20 GHz signal source based on a voltage control oscillator(VCO) and a mixer integrated on a single MMIC. The mixer generates a third harmonic output by mixing the fundamental and the second harmonic signals of the VCO. Using a relatively low frequency VCO has the advantage of better Q factor and thus better phase noise. The MMIC-signal source is designed in a GaAs-InGaP HBT process. The VCO uses balanced Colpitts topology and the mixer is a high conversion-gain single-balanced mixer. The MMIC delivers signals in the frequency range 19.4-21.2 GHz with an excellent phase noise of -100 to -93 dBc/Hz at 100 kHz offset frequency. The output power ranges between -8 and -1 dBm.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121924955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates GaN复合衬底中GaN-衬底界面的温度相关热阻
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340094
Jungwan Cho, Yiyang Li, D. Altman, W. Hoke, M. Asheghi, K. Goodson
{"title":"Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates","authors":"Jungwan Cho, Yiyang Li, D. Altman, W. Hoke, M. Asheghi, K. Goodson","doi":"10.1109/CSICS.2012.6340094","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340094","url":null,"abstract":"We report the temperature dependent thermal properties of two types of GaN composite substrates (GaN-SiC and GaN-Si) using picosecond time-domain thermoreflectance (TDTR). The intrinsic thermal conductivity of the GaN buffer film decreases with increasing temperature, while the GaN-substrate thermal interface resistance (TIR) increases with increasing temperature. The strong temperature dependence of the GaN-substrate TIR suggests that microstructural defects within the AlN transition film and near its boundaries can be particularly important.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130129716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
THz Indium Phosphide Bipolar Transistor Technology 太赫兹磷化铟双极晶体管技术
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340091
M. Rodwell, J. Rode, H. Chiang, P. Choudhary, T. Reed, E. Bloch, S. Danesgar, H.-C Park, A. Gossard, B. Thibeault, W. Mitchell, M. Urteaga, Z. Griffith, J. Hacker, M. Seo, B. Brar
{"title":"THz Indium Phosphide Bipolar Transistor Technology","authors":"M. Rodwell, J. Rode, H. Chiang, P. Choudhary, T. Reed, E. Bloch, S. Danesgar, H.-C Park, A. Gossard, B. Thibeault, W. Mitchell, M. Urteaga, Z. Griffith, J. Hacker, M. Seo, B. Brar","doi":"10.1109/CSICS.2012.6340091","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340091","url":null,"abstract":"Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm/3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131477877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz 用于100ghz以上应用的SiGe BiCMOS技术的缩放
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340083
P. Chevalier, T. Lacave, E. Canderle, A. Pottrain, Y. Carminati, J. Rosa, F. Pourchon, N. Derrier, G. Avenier, A. Montagne, A. Balteanu, E. Dacquay, I. Sarkas, D. Céli, D. Gloria, C. Gaquière, S. Voinigescu, A. Chantre
{"title":"Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz","authors":"P. Chevalier, T. Lacave, E. Canderle, A. Pottrain, Y. Carminati, J. Rosa, F. Pourchon, N. Derrier, G. Avenier, A. Montagne, A. Balteanu, E. Dacquay, I. Sarkas, D. Céli, D. Gloria, C. Gaquière, S. Voinigescu, A. Chantre","doi":"10.1109/CSICS.2012.6340083","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340083","url":null,"abstract":"This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132870746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications 开关用AlGaN/GaN HEMT的非线性电热模型
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340073
C. Charbonniaud, A. Xiong, S. Dellier, T. Gasseling
{"title":"A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications","authors":"C. Charbonniaud, A. Xiong, S. Dellier, T. Gasseling","doi":"10.1109/CSICS.2012.6340073","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340073","url":null,"abstract":"This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics (positive and negative drain voltage excursion). Compared to classical models dedicated to amplifier designs, this model is able to describe third quadrant (when driving the transistor with negative drain voltages) and zero drain voltage bias phenomena.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131419304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
GaN HEMT Junction Temperature Dependence on Diamond Substrate Anisotropy and Thermal Boundary Resistance GaN HEMT结温对金刚石衬底各向异性和热边界电阻的依赖
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340106
H. Nochetto, Nicholas R. Jankowski, A. Bar-Cohen
{"title":"GaN HEMT Junction Temperature Dependence on Diamond Substrate Anisotropy and Thermal Boundary Resistance","authors":"H. Nochetto, Nicholas R. Jankowski, A. Bar-Cohen","doi":"10.1109/CSICS.2012.6340106","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340106","url":null,"abstract":"A thermal model of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) examines the impact of diamond substrate parameters on device thermal performance. These parameters include substrate thickness, GaN-substrate thermal boundary resistance (TBR), and a simplified anisotropic substrate thermal conductivity. Diamond substrates appear to only provide thermal improvement over GaN-on-Silicon Carbide (SIC) devices when the corresponding GaN-on-diamond TBR is not substantially larger than the GaN-on-SiC range, independent of the degree of substrate anisotropy. The reduced lateral conductivity due to substrate anisotropy also proves to be of less significance to substrate thermal resistance when vertical conductivity is very high, but decreased spreading in the substrate can significantly impact cold plate temperature rise. Finally, for any degree of anisotropy, substrates thinner than 150μm are shown to significantly increase cold plate temperature rise as they restrict heat spreading and impose higher heat fluxes to downstream components.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115724022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High-Performance Silicon-Based RF Front-End Design Techniques for Adaptive and Cognitive Radios 自适应和认知无线电的高性能硅基射频前端设计技术
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI: 10.1109/CSICS.2012.6340060
L. Larson, S. Abdelhalem, C. Thomas, P. Gudem
{"title":"High-Performance Silicon-Based RF Front-End Design Techniques for Adaptive and Cognitive Radios","authors":"L. Larson, S. Abdelhalem, C. Thomas, P. Gudem","doi":"10.1109/CSICS.2012.6340060","DOIUrl":"https://doi.org/10.1109/CSICS.2012.6340060","url":null,"abstract":"Monolithic silicon-based RF front-end circuit approaches are presented as an alternative to traditional off-chip SAW and switch-based techniques, with the goal of implementing a fully integrated RF front-end. Tunable filters based on N- path techniques have demonstrated excellent noise and linearity properties, and are expected to further improve as CMOS technology continues to scale. Integrated duplexers for frequency division duplex wireless standards have also been developed recently, based on a broadband hybrid transformer approach.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130783870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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