InGaP/GaAs HBT中使用压控振荡器和混频器的20 GHz低相位噪声信号源

S. Lai, M. Bao, D. Kuylenstierna, H. Zirath
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引用次数: 0

摘要

本文提出了一种基于压控振荡器(VCO)和混频器集成在单个MMIC上的低相位噪声20ghz信号源。混频器通过混合VCO的基频和二次谐波信号产生第三次谐波输出。使用频率相对较低的压控振荡器具有更好的Q因数和相位噪声。mmic信号源采用GaAs-InGaP HBT工艺设计。压控振荡器采用平衡科尔皮茨拓扑结构,混频器采用高转换增益单平衡混频器。MMIC提供的信号频率范围为19.4-21.2 GHz,在100 kHz偏移频率下,相位噪声为-100至-93 dBc/Hz。输出功率范围为-8 ~ -1 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 20 GHz Low Phase Noise Signal Source Using VCO and Mixer in InGaP/GaAs HBT
This paper presents a low phase noise 20 GHz signal source based on a voltage control oscillator(VCO) and a mixer integrated on a single MMIC. The mixer generates a third harmonic output by mixing the fundamental and the second harmonic signals of the VCO. Using a relatively low frequency VCO has the advantage of better Q factor and thus better phase noise. The MMIC-signal source is designed in a GaAs-InGaP HBT process. The VCO uses balanced Colpitts topology and the mixer is a high conversion-gain single-balanced mixer. The MMIC delivers signals in the frequency range 19.4-21.2 GHz with an excellent phase noise of -100 to -93 dBc/Hz at 100 kHz offset frequency. The output power ranges between -8 and -1 dBm.
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