Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340084

Melissa C. Rodriguez, J. Tarazi, A. Dadello, E. Convert, M. G. McCulloch, S. Mahon, S. Hwang, Rodney G. Mould, A. Fattorini, A. C. Young, J. Harvey, A. Parker, M. Heimlich, Wen-Kai Wang

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引用次数: 9

Abstract

A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.

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全ETSI e波段倍频器，四倍频器和24 dBm功率放大器

用于e波段应用的GaAs pHEMT倍频器、四倍器和功率放大器已被证明可以在宽带宽上实现有用的输出功率和功率附加效率(PAE)。倍频和四倍频电路包括中功率放大器，以增加其增益和输出功率。该倍频器在欧洲电信标准协会(ETSI) e波段规范的整个15ghz带宽上的测量输出功率大于15dbm。该四倍器在ETSI E波段具有类似的输出功率，最大输出功率为19.2 dBm。该功率放大器的最大测量输出功率为24.2 dBm (265 mW)，在ETSI E波段超过23 dBm (200 mW)。该放大器的测量信号增益为15db，输入和输出返回损耗超过15db。其测量的PAE在整个ETSI E波段都在8%以上。这是任何半导体系统在整个71至86 GHz ETSI E频段范围内的功率放大器的最高饱和输出功率(Psat)和PAE。实验结果与仿真结果吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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