开关用AlGaN/GaN HEMT的非线性电热模型

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340073

C. Charbonniaud, A. Xiong, S. Dellier, T. Gasseling

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引用次数: 3

摘要

本文旨在描述AlGaN/GaN HEMT器件的非线性电热模型。该模型是专门为在开关模式下工作而开发的，但它也可用于放大器设计。为此，特别注意了电流源和结电容的公式，以便将模型的有效性扩展到整个I(V)特性(正漏极和负漏极电压偏移)。与专用于放大器设计的经典模型相比，该模型能够描述第三象限(当以负漏极电压驱动晶体管时)和零漏极电压偏置现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Non Linear Electrothermal Model of AlGaN/GaN HEMT for Switch Applications

This paper aims to depict a non linear and electrothermal model of AlGaN/GaN HEMT devices. This model was especially developed in order to operate in switch mode but it can also be used for amplifiers design. For this purpose, a particular attention has been brought on the formulation of the current source and the junction capacitances in order to extend the model validity all over the full I(V) characteristics (positive and negative drain voltage excursion). Compared to classical models dedicated to amplifier designs, this model is able to describe third quadrant (when driving the transistor with negative drain voltages) and zero drain voltage bias phenomena.

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2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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