Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2012-10-25 DOI:10.1109/CSICS.2012.6340083

P. Chevalier, T. Lacave, E. Canderle, A. Pottrain, Y. Carminati, J. Rosa, F. Pourchon, N. Derrier, G. Avenier, A. Montagne, A. Balteanu, E. Dacquay, I. Sarkas, D. Céli, D. Gloria, C. Gaquière, S. Voinigescu, A. Chantre

引用次数: 44

Abstract

This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.

查看原文本刊更多论文

用于100ghz以上应用的SiGe BiCMOS技术的缩放

本文总结了意法半导体(STMicroelectronics)为将SiGe HBTs的fT / fMAX提高到~ 300 GHz / 400 GHz所进行的技术进展。比较了不同SiGe HBT在w波段的噪声和功率性能，并与CML环形振荡器和D波段的电路结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量