M. Rodwell, J. Rode, H. Chiang, P. Choudhary, T. Reed, E. Bloch, S. Danesgar, H.-C Park, A. Gossard, B. Thibeault, W. Mitchell, M. Urteaga, Z. Griffith, J. Hacker, M. Seo, B. Brar
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Scaling laws and limits of THz indium Phosphide heterojunction bipolar transistors (HBTs) are presented. The primary limits to scaling through the 32 nm/3 THz node are the resistivity, penetration depth, and current-carrying capability of the emitter and base contacts. A processes flow with refractory dry-etch emitter and base contacts is presented. Beyond the 32 nm node, degenerate injection in the emitter-base junction limits transconductance and impedes scaling. At the 32 nm node, bandwidths will be sufficient for 1.4 THz transmitters and receivers.
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