{"title":"高效780 MHz GaN包络跟踪功率放大器","authors":"J. Yan, P. Theilmann, D. Kimball","doi":"10.1109/CSICS.2012.6340093","DOIUrl":null,"url":null,"abstract":"A high efficiency GaN envelope tracking power amplifier (ETPA) operated at 780 MHz, corresponding to LTE band class 14, is presented. The ETPA was tested with both a 6.6 dB PAPR WCDMA signal and a 7.5 dB PAPR 10 MHz 16 QAM LTE signal. Under the WCDMA signal, a drain efficiency of ~70% with 13.5 dB of gain and 28.6 W of output power was measured. The corresponding NRMSE, ACPR1, and ACPR2 were 1.51%, -45 dBc, and -51 dBc, respectively. For the 10 MHz LTE signal, a drain efficiency of 60% with 13.6 dB of gain and 23W of output power was measured. The corresponding EVM, ACPR1, and ACPR2 were 3%, -45 dBc, and -46 dBc, respectively. Using DPD that corrects for memory effects, results that meet the standard's specifications were obtained. To the best of the author's knowledge, the efficiency values presented here set a new record for power amplifier performance under high PAPR signals for both 5 MHz and 10 MHz modulation bandwidth signals.","PeriodicalId":290079,"journal":{"name":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A High Efficiency 780 MHz GaN Envelope Tracking Power Amplifier\",\"authors\":\"J. Yan, P. Theilmann, D. Kimball\",\"doi\":\"10.1109/CSICS.2012.6340093\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high efficiency GaN envelope tracking power amplifier (ETPA) operated at 780 MHz, corresponding to LTE band class 14, is presented. The ETPA was tested with both a 6.6 dB PAPR WCDMA signal and a 7.5 dB PAPR 10 MHz 16 QAM LTE signal. Under the WCDMA signal, a drain efficiency of ~70% with 13.5 dB of gain and 28.6 W of output power was measured. The corresponding NRMSE, ACPR1, and ACPR2 were 1.51%, -45 dBc, and -51 dBc, respectively. For the 10 MHz LTE signal, a drain efficiency of 60% with 13.6 dB of gain and 23W of output power was measured. The corresponding EVM, ACPR1, and ACPR2 were 3%, -45 dBc, and -46 dBc, respectively. Using DPD that corrects for memory effects, results that meet the standard's specifications were obtained. To the best of the author's knowledge, the efficiency values presented here set a new record for power amplifier performance under high PAPR signals for both 5 MHz and 10 MHz modulation bandwidth signals.\",\"PeriodicalId\":290079,\"journal\":{\"name\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2012.6340093\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2012.6340093","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A High Efficiency 780 MHz GaN Envelope Tracking Power Amplifier
A high efficiency GaN envelope tracking power amplifier (ETPA) operated at 780 MHz, corresponding to LTE band class 14, is presented. The ETPA was tested with both a 6.6 dB PAPR WCDMA signal and a 7.5 dB PAPR 10 MHz 16 QAM LTE signal. Under the WCDMA signal, a drain efficiency of ~70% with 13.5 dB of gain and 28.6 W of output power was measured. The corresponding NRMSE, ACPR1, and ACPR2 were 1.51%, -45 dBc, and -51 dBc, respectively. For the 10 MHz LTE signal, a drain efficiency of 60% with 13.6 dB of gain and 23W of output power was measured. The corresponding EVM, ACPR1, and ACPR2 were 3%, -45 dBc, and -46 dBc, respectively. Using DPD that corrects for memory effects, results that meet the standard's specifications were obtained. To the best of the author's knowledge, the efficiency values presented here set a new record for power amplifier performance under high PAPR signals for both 5 MHz and 10 MHz modulation bandwidth signals.