1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)最新文献_第2页

Diffusion barriers for copper interconnects 铜互连的扩散屏障

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785863

T. Oku, H. Mori, M. Murakami

引用次数: 0

Spin-on dielectric films-a general overview 自旋介电膜-一般概述

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.786546

Shizhi Wang

{"title":"Spin-on dielectric films-a general overview","authors":"Shizhi Wang","doi":"10.1109/ICSICT.1998.786546","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.786546","url":null,"abstract":"In this paper an overview of both new and existing spin-on dielectric materials used in the manufacture of integrated circuit devices will be presented. Present day integrated circuit devices have 2 to 3 levels of metal interconnects, and future devices may contain upwards of 6 metal levels. This evolving structural complexity necessitates the development of low dielectric constant insulators keeping the RC time constant of the metal-insulator structure to a minimum. This meets the needs of today's high clock speed devices. In addition, spin-on dielectric films must be capable of withstanding temperatures in excess of 400/spl deg/C, resistant to water absorption, have good adhesion to underlying films, generate crack free films ranging in thickness from 0.1 to 1 /spl mu/m, and possess excellent mechanical and electrical strength. Spin-on dielectric films can be classified into four families: silicate, siloxane, organic, and nanoporous silicate. Silicates are silicon dioxide films formed by the cross-linking reaction of hydroxylated-silicate oligomers. Siloxanes are silicate compounds that are either partially or fully methylated. The addition of the methyl group lowers the film stress, lowers the dielectric constant by lowering the film density, and at the same time improves the gap fill and planarization of these films. Hydrogen, and have hydrogenmethyl siloxane combinations are under evaluation as well. Organic dielectrics are currently receiving a lot of attention from semiconductor device manufacturers and have-the benefit that thick, crack free, films can be formed. Organic polymers, on the other hand, are limited by their thermal stability. Nanoporous silicates overcome this issue by retaining a thermally stable silicon-oxygen backbone but make use of a modified xerogel technology to impart a nanoporous film structure resulting in ultra-low dielectric constant films.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124009024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

MEMS developments in Tsinghua University 清华大学MEMS的发展

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.786495

Liu Litian, L. Zhijian

引用次数: 0

CMOS performance and density trends as we approach 0.1 /spl mu/m 当我们接近0.1 /spl mu/m时，CMOS性能和密度趋势

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785768

T. Ning

引用次数: 0

Carrier freeze-out in strained p-Si/sub 1-x/Ge/sub x/ layers 应变p-Si/sub - 1-x/Ge/sub -x/层中载流子冻出

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.786136

Zhang Wan-rong, Li Zhi-guo, Luo Jin-sheng, Chang Yao-Hai, Chen Jian-xin, Shen Guang-di

引用次数: 0

The influence of SI-GaAs crystal property on device characteristic SI-GaAs晶体性质对器件特性的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785981

Xiukun He, Q. Ru, Li Ding

引用次数: 0

AlGaAs/InGaAs PHEMT preamplifier for optical communication systems 用于光通信系统的AlGaAs/InGaAs PHEMT前置放大器

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785958

J. Ao, Shiyong Liu, Q. Zeng, Yonglin Zhao, K. Cai, Xian-jie Li, Xhixian Jiao, Jianjun Gao, Chun-Guang Liang

引用次数: 4

The new equipment for IC testing 新型集成电路测试设备

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785939

Wang Hua, Lu Zong Li, Zhang Jian Zhong

{"title":"The new equipment for IC testing","authors":"Wang Hua, Lu Zong Li, Zhang Jian Zhong","doi":"10.1109/ICSICT.1998.785939","DOIUrl":"https://doi.org/10.1109/ICSICT.1998.785939","url":null,"abstract":"The very large scale integration used for the design and fabrication of modern microelectronics devices should have good suitability for temperature. For example the space grade IC should withstand hard temperature shock from +125/spl deg/C to -55/spl deg/C or reverse in 5 mins. For failure analysis techniques, it is necessary to investigate the performance of an IC under different temperatures. Therefore the demand for new test equipment arises, which can cool or heat ICs to make the die temperature of the IC change from high to low or from low to high. There are some mechanical refrigeration systems that you can choose, but it is difficult to control the temperature of the IC, and this kind of apparatus often has problems in the summer. We have developed a new equipment with working temperatures in the range of -55/spl deg/C/spl sim/+125/spl deg/C, it uses a thermoelectric cooler as cooling or heating units. We can easily control the cold plate temperature by means of regulating the input voltage. In this equipment, the cold side can be smoothly regulated, stabilized and indicated on the display. This paper introduces the design of the control system and multistage TEM cooling system, the cooling power of which is 3 W, when the temperature of cold side is -55/spl deg/C and hot side is 30/spl deg/C.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125665956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Influence of "gate-biasing effect" on BSIT's saturated property “门偏效应”对BSIT饱和特性的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785837

Jiang Yanfeng, L. Siyuan, Li Hairong, Meng Xionghui

引用次数: 0

The total dose effect on two types of CMOS devices 两种CMOS器件的总剂量效应

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI: 10.1109/ICSICT.1998.785797

Zhang Zheng-Xuam, Lue Jin-Sheng, Yuan Ron-Feng, Hei Bao-ping, Jiang Jing-Ho

引用次数: 2