当我们接近0.1 /spl mu/m时，CMOS性能和密度趋势

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785768

T. Ning

{"title":"当我们接近0.1 /spl mu/m时，CMOS性能和密度趋势","authors":"T. Ning","doi":"10.1109/ICSICT.1998.785768","DOIUrl":null,"url":null,"abstract":"The technology development required to sustain the CMOS performance and density trends near and beyond 0.1 /spl mu/m is examined. It is concluded that we are fast approaching the limits of scaling conventional (bulk) CMOS. We need to look beyond scaling bulk CMOS in order to sustain the rate of CMOS performance improvement.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"307 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS performance and density trends as we approach 0.1 /spl mu/m\",\"authors\":\"T. Ning\",\"doi\":\"10.1109/ICSICT.1998.785768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The technology development required to sustain the CMOS performance and density trends near and beyond 0.1 /spl mu/m is examined. It is concluded that we are fast approaching the limits of scaling conventional (bulk) CMOS. We need to look beyond scaling bulk CMOS in order to sustain the rate of CMOS performance improvement.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"307 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了维持CMOS性能和密度趋势接近和超过0.1 /spl mu/m所需的技术发展。结论是，我们正在快速接近传统CMOS(体)的极限。为了维持CMOS性能提升的速度，我们需要超越规模化的CMOS。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

CMOS performance and density trends as we approach 0.1 /spl mu/m

The technology development required to sustain the CMOS performance and density trends near and beyond 0.1 /spl mu/m is examined. It is concluded that we are fast approaching the limits of scaling conventional (bulk) CMOS. We need to look beyond scaling bulk CMOS in order to sustain the rate of CMOS performance improvement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

自引率

0.00%

发文量