SI-GaAs晶体性质对器件特性的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785981

Xiukun He, Q. Ru, Li Ding

{"title":"SI-GaAs晶体性质对器件特性的影响","authors":"Xiukun He, Q. Ru, Li Ding","doi":"10.1109/ICSICT.1998.785981","DOIUrl":null,"url":null,"abstract":"In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of SI-GaAs crystal property on device characteristic\",\"authors\":\"Xiukun He, Q. Ru, Li Ding\",\"doi\":\"10.1109/ICSICT.1998.785981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了未掺杂SI-GaAs晶体的特性，并进行了相关的器件工艺实验。分析了材料与器件性能之间的关系，研究了SI-GaAs晶体中各种参数及其分布对器件性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The influence of SI-GaAs crystal property on device characteristic

In this paper we have investigated the characteristics of undoped SI-GaAs crystals and carried out related experiments concerning device processes. We have analyzed the relationship between the material and device properties and studied the effect of the various parameters and their distribution in the SI-GaAs crystal on the device characteristics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

自引率

0.00%

发文量