用于光通信系统的AlGaAs/InGaAs PHEMT前置放大器

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785958

J. Ao, Shiyong Liu, Q. Zeng, Yonglin Zhao, K. Cai, Xian-jie Li, Xhixian Jiao, Jianjun Gao, Chun-Guang Liang

{"title":"用于光通信系统的AlGaAs/InGaAs PHEMT前置放大器","authors":"J. Ao, Shiyong Liu, Q. Zeng, Yonglin Zhao, K. Cai, Xian-jie Li, Xhixian Jiao, Jianjun Gao, Chun-Guang Liang","doi":"10.1109/ICSICT.1998.785958","DOIUrl":null,"url":null,"abstract":"The design, fabrication and characteristics of a AlGaAs/InGaAs PHEMT monolithic transimpedance preamplifier is described. The PHEMT material used here is based on /spl delta/-doped carrier supplying layer and GaAs/AlGaAs superlattice buffer. The transconductance and output conductance of a 1 /spl mu/m-gate PHEMT is 250 mS/mm and 8mS/mm respectively with threshold voltage of -1.2 v, the maximum saturation current density is 235 mS/mm. On-wafer network analysis with HP8510 network analyzer shows its cut-off frequency of 21 GHz and maximum oscillation frequency of 40 GHz. Transimpedance preamplifier its measured maximum transimpedance gain of 51.4 dB/spl Omega/ with -3 dB bandwidth no less than 5.05 GHz. The input equivalent-noise current density is 13 PA//spl radic/Hz.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"AlGaAs/InGaAs PHEMT preamplifier for optical communication systems\",\"authors\":\"J. Ao, Shiyong Liu, Q. Zeng, Yonglin Zhao, K. Cai, Xian-jie Li, Xhixian Jiao, Jianjun Gao, Chun-Guang Liang\",\"doi\":\"10.1109/ICSICT.1998.785958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication and characteristics of a AlGaAs/InGaAs PHEMT monolithic transimpedance preamplifier is described. The PHEMT material used here is based on /spl delta/-doped carrier supplying layer and GaAs/AlGaAs superlattice buffer. The transconductance and output conductance of a 1 /spl mu/m-gate PHEMT is 250 mS/mm and 8mS/mm respectively with threshold voltage of -1.2 v, the maximum saturation current density is 235 mS/mm. On-wafer network analysis with HP8510 network analyzer shows its cut-off frequency of 21 GHz and maximum oscillation frequency of 40 GHz. Transimpedance preamplifier its measured maximum transimpedance gain of 51.4 dB/spl Omega/ with -3 dB bandwidth no less than 5.05 GHz. The input equivalent-noise current density is 13 PA//spl radic/Hz.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

介绍了一种AlGaAs/InGaAs PHEMT单片跨阻前置放大器的设计、制作及其特点。本文使用的PHEMT材料是基于/spl δ /掺杂载流子供应层和GaAs/AlGaAs超晶格缓冲层。1 /spl mu/m栅极PHEMT的跨导和输出导分别为250 mS/mm和8mS/mm，阈值电压为-1.2 v，最大饱和电流密度为235 mS/mm。用HP8510网络分析仪进行片上网络分析，其截止频率为21 GHz，最大振荡频率为40 GHz。跨阻前置放大器的实测最大跨阻增益为51.4 dB/spl ω /， -3 dB带宽不小于5.05 GHz。输入等效噪声电流密度为13 PA//spl径向/Hz。

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AlGaAs/InGaAs PHEMT preamplifier for optical communication systems

The design, fabrication and characteristics of a AlGaAs/InGaAs PHEMT monolithic transimpedance preamplifier is described. The PHEMT material used here is based on /spl delta/-doped carrier supplying layer and GaAs/AlGaAs superlattice buffer. The transconductance and output conductance of a 1 /spl mu/m-gate PHEMT is 250 mS/mm and 8mS/mm respectively with threshold voltage of -1.2 v, the maximum saturation current density is 235 mS/mm. On-wafer network analysis with HP8510 network analyzer shows its cut-off frequency of 21 GHz and maximum oscillation frequency of 40 GHz. Transimpedance preamplifier its measured maximum transimpedance gain of 51.4 dB/spl Omega/ with -3 dB bandwidth no less than 5.05 GHz. The input equivalent-noise current density is 13 PA//spl radic/Hz.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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