两种CMOS器件的总剂量效应

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785797

Zhang Zheng-Xuam, Lue Jin-Sheng, Yuan Ron-Feng, Hei Bao-ping, Jiang Jing-Ho

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引用次数: 2

摘要

本文研究了两种CMOS器件在/sup 60/Co环境下的辐射响应。这两种类型的CMOS器件分别表示为硬化和未硬化。利用MOSFET的I-V特性，分析了两种不同剂量率下阈值电压漂移与辐射剂量的关系、辐射诱导界面阱和氧化物阱引起的电压漂移与辐射剂量的关系以及辐射诱导界面阱密度与辐射剂量的关系。分析了CMOS逆变器的转移电压漂移与辐射剂量的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The total dose effect on two types of CMOS devices

In this paper the radiation response of two types of CMOS devices exposed to /sup 60/Co is studied. The two types of CMOS devices were denoted as hardened and unhardened, respectively. Using MOSFET I-V characteristics, threshold-voltage shifts dependence on the radiation dose, voltage shifts due to radiation-induced interface traps and oxide traps dependence on the radiation dose and the density of radiation-induced interface traps dependence on the radiation dose, were analysed under two different dose rates. The dependence of a CMOS inverter's transfer-voltage shifts on radiation dose was analysed also.

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来源期刊

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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