{"title":"铜互连的扩散屏障","authors":"T. Oku, H. Mori, M. Murakami","doi":"10.1109/ICSICT.1998.785863","DOIUrl":null,"url":null,"abstract":"Thermally stable, thin W/sub 2/N, TaN, and TaC diffusion barrier layers between Cu and Si were developed by a radio-frequency sputtering method. The W/sub 2/N(8 nm), TaN(8 nm) and TaC(5 nm) barrier layers were found to prevent Cu diffusion to Si after annealing at 600, 700, and 600/spl deg/C for 30 min, respectively. From the microstructural and diffusional analyses, the Cu diffusion mechanism through the barrier layers was explained by grain boundary and lattice diffusion.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diffusion barriers for copper interconnects\",\"authors\":\"T. Oku, H. Mori, M. Murakami\",\"doi\":\"10.1109/ICSICT.1998.785863\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermally stable, thin W/sub 2/N, TaN, and TaC diffusion barrier layers between Cu and Si were developed by a radio-frequency sputtering method. The W/sub 2/N(8 nm), TaN(8 nm) and TaC(5 nm) barrier layers were found to prevent Cu diffusion to Si after annealing at 600, 700, and 600/spl deg/C for 30 min, respectively. From the microstructural and diffusional analyses, the Cu diffusion mechanism through the barrier layers was explained by grain boundary and lattice diffusion.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785863\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally stable, thin W/sub 2/N, TaN, and TaC diffusion barrier layers between Cu and Si were developed by a radio-frequency sputtering method. The W/sub 2/N(8 nm), TaN(8 nm) and TaC(5 nm) barrier layers were found to prevent Cu diffusion to Si after annealing at 600, 700, and 600/spl deg/C for 30 min, respectively. From the microstructural and diffusional analyses, the Cu diffusion mechanism through the barrier layers was explained by grain boundary and lattice diffusion.
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