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2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)最新文献

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A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application 一种大功率常关p栅AlGaN/GaN HEMT
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487132
Ninggang Dong, Meihua Liu, Limeng Shi, Xinnan Lin
{"title":"A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application","authors":"Ninggang Dong, Meihua Liu, Limeng Shi, Xinnan Lin","doi":"10.1109/EDSSC.2018.8487132","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487132","url":null,"abstract":"In this paper, a novel normally-off p-GaN gate AlGaN/GaN HEMT on AlGaN buffer with an InGaN layer inserted between GaN channel and AlGaN buffer is proposed and investigated by Sentaurus TCAD simulation tool. A higher drain current (lower $mathrm {R}_{mathrm{on}})$ in the on-state and higher breakdown voltage $( mathrm {V}_{mathrm{Br}})$ are achieved simultaneously. The ${mathrm {V}_{mathrm{Br}}}^{2}/ mathrm {R}_{mathrm{on}}$ is increased by 34.8%.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129494312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bi-directional Battery-to-Battery Wireless Charging Enabled by Reconfigurable Wireless Power Transceivers (Invited Paper) 可重构无线电源收发器实现双向电池对电池无线充电(特邀论文)
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487127
Yan Lu, Fangyu Mao, R. Martins
{"title":"Bi-directional Battery-to-Battery Wireless Charging Enabled by Reconfigurable Wireless Power Transceivers (Invited Paper)","authors":"Yan Lu, Fangyu Mao, R. Martins","doi":"10.1109/EDSSC.2018.8487127","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487127","url":null,"abstract":"This paper introduces a new application of wireless power transfer, enabled by our reconfigurable bi-directional wireless power transceiver chips. Here, two reconfigurable wireless power transceivers, which reuse almost all of the hardware, are briefly discussed. In particular, a novel cross-connected structure for the differential class-D power amplifier in the transmitter mode is proposed for reducing the switching losses. Fabricated in 0.35 μm CMOS process with 5V devices, over 78% battery-to-battery charging total efficiency and over 0.6A wireless charging current are demonstrated with two identical transceiver chips with printed coupling coils on board.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123218690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter 考虑迁移率幂律参数的有机TFTs 1/f噪声分析
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487137
Hongyu He, Yuan Liu, Hao Wang, Xinnan Lin, Xueren Zheng, Shengdong Zhang
{"title":"Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter","authors":"Hongyu He, Yuan Liu, Hao Wang, Xinnan Lin, Xueren Zheng, Shengdong Zhang","doi":"10.1109/EDSSC.2018.8487137","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487137","url":null,"abstract":"Based on carrier number fluctuation model, $1/f$ noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter $alpha $ determines the relationship between drain current noise power spectral density (PSD) $S_{I_{mathrm {D}mathrm {S}}}$ and drain current $I_{mathrm {D}mathrm {S}}$, and it is found that $S_{I_{mathrm {D}mathrm {S}}}/I_{mathrm {D}mathrm {S}}^{2} propto I_{mathrm {D}mathrm {S}}^{-1}$ when $alpha = 1$. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When $S_{I_{mathrm {D}mathrm {S}}}/I_{mathrm {D}mathrm {S}}^{2} propto I_{mathrm {D}mathrm {S}}^{-1}$, Hooge’s mobility fluctuation model dominates the $1/f$ noise.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130304692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement Of Positive Bias Stress Stability For IGZO TFTs By A CAAC Gd-AZO Bulk Layer 用CAAC Gd-AZO体层增强IGZO tft的正偏置应力稳定性
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487165
Junchen Dong, Huijin Li, Z. Luo, Xing Zhang, Dedong Han, Yi Wang
{"title":"Enhancement Of Positive Bias Stress Stability For IGZO TFTs By A CAAC Gd-AZO Bulk Layer","authors":"Junchen Dong, Huijin Li, Z. Luo, Xing Zhang, Dedong Han, Yi Wang","doi":"10.1109/EDSSC.2018.8487165","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487165","url":null,"abstract":"A c-axis-aligned crystalline Gd-Al-Zn-O (CAAC Gd-AZO) layer is implemented at the interface between the active layer and dielectric to enhance positive gate bias stress (PBS) stability of In-Ga-Zn-O thin film transistors (IGZO TFTs). The Gd-AZO bulk layer diminishes the root-mean-square (RMS) roughness of the IGZO back channel layer, which leads to the smaller threshold voltage shift $(Delta mathrm {V}_{T})$ of the Gd-AZO/IGZO TFTs than the IGZO/IGZO TFTs.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114807205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertical Channel ITO-stabilized ZnO Thin-Film Transistors 垂直通道ito稳定ZnO薄膜晶体管
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487064
Xuemei Yin, Sunbin Deng, Guoyuan Li, W. Zhong, Rongsheng Chen, M. Wong, H. Kwok
{"title":"Vertical Channel ITO-stabilized ZnO Thin-Film Transistors","authors":"Xuemei Yin, Sunbin Deng, Guoyuan Li, W. Zhong, Rongsheng Chen, M. Wong, H. Kwok","doi":"10.1109/EDSSC.2018.8487064","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487064","url":null,"abstract":"Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as $3.7 times 10 ^{7}$ while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126504694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gait Recognition Based on Graphene Porous Network Structure Pressure Sensors for Rehabilitation Therapy 基于石墨烯多孔网络结构压力传感器的步态识别康复治疗
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487142
Song Jiang, Yu Pang, Dan-Yang Wang, Yifan Yang, Zhen Yang, Yi Yang, T. Ren
{"title":"Gait Recognition Based on Graphene Porous Network Structure Pressure Sensors for Rehabilitation Therapy","authors":"Song Jiang, Yu Pang, Dan-Yang Wang, Yifan Yang, Zhen Yang, Yi Yang, T. Ren","doi":"10.1109/EDSSC.2018.8487142","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487142","url":null,"abstract":"With the development of health-care and rehabilitation therapy, the collection and analysis of gaits occupy an important position in real-time diagnose. To detect gait patterns accurately, an efficient walking monitoring system is crucial. In this paper, we present a wearable in-shoe system for human gait detection. In our system, a shoe with novel Graphene Porous Network Structure Pressure Sensors (GPNSPS) is used to measure the plantar pressure of walking and an ensemble machine learning method is utilized as the classifier to recognize gait patterns including normal patterns, toe in, toe out, lame feet and heel feet. The flexible and intelligent system demonstrates a promising potential to assist the patients in their rehabilitative care.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132664484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Investigation of the Liquid Loading Effect on the Flexible Acoustic Wave Devices for in-Liquid Sensing Applications 液体载荷对液体传感柔性声波器件的影响研究
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487067
Changjian Zhou, Jialin Li, Bin Li, T. Ren
{"title":"Investigation of the Liquid Loading Effect on the Flexible Acoustic Wave Devices for in-Liquid Sensing Applications","authors":"Changjian Zhou, Jialin Li, Bin Li, T. Ren","doi":"10.1109/EDSSC.2018.8487067","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487067","url":null,"abstract":"Flexible electronics has many unique qualities such as bendable, lightweight and low-cost fabrication, and are particularly suitable for biosensor applications. Biosensors based on acoustic wave devices feature high resolution, digital output, and wireless operation. In this paper, we address the important issue when the flexible acoustic wave devices are used in liquid for sensing applications. A two-port resonator structure is proposed to implement the flexible acoustic wave device. Electrical measurements were conducted for the same device under various environments, and the liquid loading induced lowering of the quality factor are analyzed.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129235514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation 基于块调制的瞬态改进动态复制LDO调节器
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487161
Gangfeng Ma, Chengchang Zhan, Yi Zhang
{"title":"A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation","authors":"Gangfeng Ma, Chengchang Zhan, Yi Zhang","doi":"10.1109/EDSSC.2018.8487161","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487161","url":null,"abstract":"This paper presents a transient-improved dynamic-replica low-dropout (LDO) regulator. In the proposed LDO regulator, dynamic-replica and bulk modulation techniques are utilized to significantly improve regulation precision while maintaining good stability over a wide load capacitance range. Furthermore, differentiator-based spike coupling is used to improve the transient responses. A prototype of the proposed LDO is designed and fabricated in a standard 65-nm CMOS process. With 1.2V supply, it achieves 0.2V dropout voltage and supports a maximum of 50mA load current, while allowing for virtually any load capacitance value.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123679692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Carbon-based Nanostructures for Flexible Electronics 柔性电子的碳基纳米结构
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487178
Jeongwon Park, Changjian Zhou, Cary Y. Yang
{"title":"Carbon-based Nanostructures for Flexible Electronics","authors":"Jeongwon Park, Changjian Zhou, Cary Y. Yang","doi":"10.1109/EDSSC.2018.8487178","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487178","url":null,"abstract":"Carbon nanotube and graphene are potential candidate materials for nanoelectronics applications due to their tolerance to electromigration under high current densities and excellent electrical, thermal, and mechanical properties. In this paper, we address the key challenges for integrating carbon-based nanostructures in flexible electronics. Toward this end, we review both the applications of nanocarbon materials as passive components and active components, and address the common problems in nanocarbon electronics. We further explore the potential of an all-carbon nanostructure for various electronic device applications.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124755481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanoelectrode Arrays Based on Vertically Aligned Carbon Nanofibers for Dielectrophoretic Capture and Detection of Pathogens 基于垂直排列碳纳米纤维的纳米电极阵列用于介电捕获和病原体检测
2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI: 10.1109/EDSSC.2018.8487120
Jun Li
{"title":"Nanoelectrode Arrays Based on Vertically Aligned Carbon Nanofibers for Dielectrophoretic Capture and Detection of Pathogens","authors":"Jun Li","doi":"10.1109/EDSSC.2018.8487120","DOIUrl":"https://doi.org/10.1109/EDSSC.2018.8487120","url":null,"abstract":"Dielectrophoresis (DEP) is a technique that utilizes electric field to manipulate polarizaule particles. Here we summarize our studies on developing a nanostructured DEP device for capture of bacterial cells and viral particles. A high magnitude non-uniform electric field was produced in a microfluidic channel utilizing a nanoelectrode array made of vertically aligned carbon nanofibers versus a macroscopic indium tin oxide counter electrode in a “points-and-lid” configuration. Reversiule DEP capture was demonstrated with E. coli bacterial cells (~1-2 micron in size) and viral particles (bacteriophage T4r and vaccinia virus, ~80-200 nm in size) with an AC voltage (100 Hz to 1 MHz). The DEP technique can Ue coupled with surface enhanced Raman spectroscopy (SERS) reporter for rapid and specific detection of E. coli cells.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114852150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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