{"title":"A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation","authors":"Gangfeng Ma, Chengchang Zhan, Yi Zhang","doi":"10.1109/EDSSC.2018.8487161","DOIUrl":null,"url":null,"abstract":"This paper presents a transient-improved dynamic-replica low-dropout (LDO) regulator. In the proposed LDO regulator, dynamic-replica and bulk modulation techniques are utilized to significantly improve regulation precision while maintaining good stability over a wide load capacitance range. Furthermore, differentiator-based spike coupling is used to improve the transient responses. A prototype of the proposed LDO is designed and fabricated in a standard 65-nm CMOS process. With 1.2V supply, it achieves 0.2V dropout voltage and supports a maximum of 50mA load current, while allowing for virtually any load capacitance value.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents a transient-improved dynamic-replica low-dropout (LDO) regulator. In the proposed LDO regulator, dynamic-replica and bulk modulation techniques are utilized to significantly improve regulation precision while maintaining good stability over a wide load capacitance range. Furthermore, differentiator-based spike coupling is used to improve the transient responses. A prototype of the proposed LDO is designed and fabricated in a standard 65-nm CMOS process. With 1.2V supply, it achieves 0.2V dropout voltage and supports a maximum of 50mA load current, while allowing for virtually any load capacitance value.