A Transient-Improved Dynamic-Replica LDO Regulator with Bulk Modulation

Gangfeng Ma, Chengchang Zhan, Yi Zhang
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引用次数: 2

Abstract

This paper presents a transient-improved dynamic-replica low-dropout (LDO) regulator. In the proposed LDO regulator, dynamic-replica and bulk modulation techniques are utilized to significantly improve regulation precision while maintaining good stability over a wide load capacitance range. Furthermore, differentiator-based spike coupling is used to improve the transient responses. A prototype of the proposed LDO is designed and fabricated in a standard 65-nm CMOS process. With 1.2V supply, it achieves 0.2V dropout voltage and supports a maximum of 50mA load current, while allowing for virtually any load capacitance value.
基于块调制的瞬态改进动态复制LDO调节器
提出了一种瞬态改进的动态复制低差(LDO)稳压器。在本文提出的LDO稳压器中,采用了动态复制和块调制技术来显著提高调节精度,同时在较宽的负载电容范围内保持良好的稳定性。此外,采用基于微分器的尖峰耦合来改善瞬态响应。在标准的65纳米CMOS工艺中设计和制造了LDO的原型。它具有1.2V电源,可实现0.2V降压,支持最大50mA负载电流,同时允许几乎任何负载电容值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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