A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application

Abstract

In this paper, a novel normally-off p-GaN gate AlGaN/GaN HEMT on AlGaN buffer with an InGaN layer inserted between GaN channel and AlGaN buffer is proposed and investigated by Sentaurus TCAD simulation tool. A higher drain current (lower $\mathrm {R}_{\mathrm{on}})$ in the on-state and higher breakdown voltage $( \mathrm {V}_{\mathrm{Br}})$ are achieved simultaneously. The ${\mathrm {V}_{\mathrm{Br}}}^{2}/ \mathrm {R}_{\mathrm{on}}$ is increased by 34.8%.