垂直通道ito稳定ZnO薄膜晶体管

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487064

Xuemei Yin, Sunbin Deng, Guoyuan Li, W. Zhong, Rongsheng Chen, M. Wong, H. Kwok

{"title":"垂直通道ito稳定ZnO薄膜晶体管","authors":"Xuemei Yin, Sunbin Deng, Guoyuan Li, W. Zhong, Rongsheng Chen, M. Wong, H. Kwok","doi":"10.1109/EDSSC.2018.8487064","DOIUrl":null,"url":null,"abstract":"Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as $3.7 \\times 10 ^{7}$ while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vertical Channel ITO-stabilized ZnO Thin-Film Transistors\",\"authors\":\"Xuemei Yin, Sunbin Deng, Guoyuan Li, W. Zhong, Rongsheng Chen, M. Wong, H. Kwok\",\"doi\":\"10.1109/EDSSC.2018.8487064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as $3.7 \\\\times 10 ^{7}$ while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.\",\"PeriodicalId\":279745,\"journal\":{\"name\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2018.8487064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

成功制备了通道长度为500nm的垂直通道ito稳定ZnO薄膜晶体管。这些器件具有良好的电气性能，亚阈值摆幅(SS)低至0.23 V/dec，开/关电流比(Ion/Ioff)高达3.7 \ × 10 ^{7}$，而Vds为0.05V。对不同沟道宽度和不同源漏重叠面积的垂直沟道tft进行了详细研究。结果表明，垂直通道ito稳定的ZnO tft具有较小的重叠，具有较高的电特性。此外，垂直沟道TFTs在不同沟道宽度下均表现出良好的标度行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as $3.7 \times 10 ^{7}$ while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

自引率

0.00%

发文量