一种大功率常关p栅AlGaN/GaN HEMT

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487132

Ninggang Dong, Meihua Liu, Limeng Shi, Xinnan Lin

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引用次数: 0

摘要

本文提出了一种新型的常关p-GaN栅极AlGaN/GaN HEMT，并在GaN通道和AlGaN缓冲器之间插入InGaN层，通过Sentaurus TCAD仿真工具进行了研究。在导通状态下可以同时获得较高的漏极电流(较低的$\mathrm {R}_{\mathrm{on}})和较高的击穿电压($\mathrm {V}_{\mathrm{Br}})。V $ {\ mathrm {} _ {\ mathrm {Br}}} ^ {2} / \ mathrm {R} _ {\ mathrm{在}}是美元增加了34.8%。

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A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application

In this paper, a novel normally-off p-GaN gate AlGaN/GaN HEMT on AlGaN buffer with an InGaN layer inserted between GaN channel and AlGaN buffer is proposed and investigated by Sentaurus TCAD simulation tool. A higher drain current (lower $\mathrm {R}_{\mathrm{on}})$ in the on-state and higher breakdown voltage $( \mathrm {V}_{\mathrm{Br}})$ are achieved simultaneously. The ${\mathrm {V}_{\mathrm{Br}}}^{2}/ \mathrm {R}_{\mathrm{on}}$ is increased by 34.8%.

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2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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