Vertical Channel ITO-stabilized ZnO Thin-Film Transistors

Abstract

Vertical channel ITO-stabilized ZnO thin-Film transistors (TFT) with channel length of 500 nm were successfully fabricated. These devices show good electrical performance with a small subthreshold swing (SS) as low as 0.23 V/dec and the on/off current ratio (Ion/Ioff) as high as $3.7 \times 10 ^{7}$ while Vds was 0.05V. The vertical channel TFTs with different channel widths and different overlap area between the source and drain were investigated in detail. It was found that the vertical channel ITO-stabilized ZnO TFTs with smaller overlap exhibited higher electrical characteristics. In addition, the vertical channel TFTs show good scaling behaviors with different channel width.