用CAAC Gd-AZO体层增强IGZO tft的正偏置应力稳定性

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487165

Junchen Dong, Huijin Li, Z. Luo, Xing Zhang, Dedong Han, Yi Wang

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引用次数: 0

摘要

为了提高In-Ga-Zn-O薄膜晶体管(IGZO TFTs)的正栅极偏置应力(PBS)稳定性，在有源层和介电介质之间的界面上实现了c轴取向的Gd-Al-Zn-O (CAAC Gd-AZO)晶体层。Gd-AZO本体层降低了IGZO回道层的均方根粗糙度，使得Gd-AZO/IGZO tft的阈值电压位移$(\Delta \mathrm {V}_{T})$小于IGZO/IGZO tft。

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Enhancement Of Positive Bias Stress Stability For IGZO TFTs By A CAAC Gd-AZO Bulk Layer

A c-axis-aligned crystalline Gd-Al-Zn-O (CAAC Gd-AZO) layer is implemented at the interface between the active layer and dielectric to enhance positive gate bias stress (PBS) stability of In-Ga-Zn-O thin film transistors (IGZO TFTs). The Gd-AZO bulk layer diminishes the root-mean-square (RMS) roughness of the IGZO back channel layer, which leads to the smaller threshold voltage shift $(\Delta \mathrm {V}_{T})$ of the Gd-AZO/IGZO TFTs than the IGZO/IGZO TFTs.

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2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

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