ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)最新文献_第2页

Extraction of the trap density at the gate periphery using the gated diode array for giga-bit DRAMs 利用门控二极管阵列提取千兆位dram栅极外围的陷阱密度

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766228

H. Suzuki, M. Kojima, Y. Nara

引用次数: 2

Measurement of V/sub T/ and L/sub eff/ using MOSFET gate-substrate capacitance 利用MOSFET栅极-衬底电容测量V/sub T/和L/sub eff/

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766234

M. Lau, C. Chiang, Y. Yeow, Z. Yao

引用次数: 3

A simple physical extraction method for R/sub D/-R/sub S/ of asymmetric MOSFETs 非对称mosfet的R/sub - D/-R/sub - S/的简单物理提取方法

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766232

Alfred Blaum, James Victory, Colin C. McAndrewt

引用次数: 3

The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs 噪声参数去嵌入对 MOSFET 高频噪声建模的影响

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766212

M. Deen, Chih-Hung Chen

引用次数: 21

A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors 一种用于直接提取双多晶硅双极晶体管SPICE模型参数的新型测试结构

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766211

M. Sandén, Shi-Li Zhang, J. Grahn, M. Ostling

引用次数: 1

Identification of plasma induced damage conditions in VLSI designs 超大规模集成电路设计中等离子体诱导损伤条件的识别

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766206

P. Simon, Wojciech Maly

引用次数: 8

Analysis of current flow in mono-crystalline electrical linewidth structures 单晶电线宽结构中的电流分析

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766207

S. Smith, I. Lindsay, A. Walton, M. Cresswell, L. W. Linholm, R. Allen, M. Fallon, A. Gundlach

引用次数: 3

Null holographic test structures for the measurement of overlay and its statistical variation 用于测量覆盖层及其统计变化的零全息测试结构

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766235

S.A. AbuGhazeleh, P. Christie, V. Agrawal, J. Stevenson, A. Walton, A. Gundlach, S. Smith

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引用次数: 3

Contribution to the characterization of the hump effect in MOSFET submicronic technologies 对MOSFET亚微米技术中驼峰效应表征的贡献

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766241

H. Brut, R. Velghe

引用次数: 9

Identification of MOS oxide defect location with a spatial resolution less than 0.1 /spl mu/m using photoemission microscope 利用光电显微镜以小于0.1 /spl mu/m的空间分辨率识别MOS氧化物缺陷位置

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI: 10.1109/ICMTS.1999.766222

T. Ohzone, M. Yuzaki, T. Matsuda, E. Kameda

引用次数: 0