非对称mosfet的R/sub - D/-R/sub - S/的简单物理提取方法

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766232

Alfred Blaum, James Victory, Colin C. McAndrewt

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引用次数: 3

摘要

具有不同漏极和源极串联电阻(R/sub D/和R/sub S/)的mosfet在中功率和高功率技术以及深亚微米技术中都很常见。非对称mosfet的正确建模需要精确表征R/sub D/-R/sub S/。本文介绍了一种新的、简单的、基于实验数据确定R/sub D/-R/sub S/的物理提取技术的概念和结果。该方法对MOSFET漏极电流建模的假设最小。

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A simple physical extraction method for R/sub D/-R/sub S/ of asymmetric MOSFETs

MOSFETs with different drain and source series resistance, R/sub D/ and R/sub S/, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of R/sub D/-R/sub S/. This paper presents the concept and the results of a new, simple, and physical extraction technique to determine R/sub D/-R/sub S/ purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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