Identification of MOS oxide defect location with a spatial resolution less than 0.1 /spl mu/m using photoemission microscope

Abstract

The maximum photoemission position corresponding to an oxide defect was determined with a spatial resolution of less than 0.1 /spl mu/m by a combination of an improved photoemission microscope with a magnification of 500/spl times/ and a MOS capacitor test structure which had a periodic X-Y matrix pattern to define the precise oxide-defect location. The field-oxide islands, which had photoemission spots from the oxide defects, were distributed at random. The LOCOS edge corresponding to the intensity dent of the reflected light image was located at about +0.3 /spl mu/m from the gate-oxide edge. The oxide defects were located in a range from +0.4/spl sim/-0.1 /spl mu/m from the LOCOS edge.