Measurement of V/sub T/ and L/sub eff/ using MOSFET gate-substrate capacitance

Abstract

This paper describes and demonstrates new methods for the measurement of MOSFET threshold voltage and effective channel length using gate-to-substrate capacitance C/sub gb/. The measurement does not require DC drain current flowing between drain and source and thus eliminate the effect of source and drain resistances and the presence of an asymmetric potential profile between source and drain.