单晶电线宽结构中的电流分析

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766207

S. Smith, I. Lindsay, A. Walton, M. Cresswell, L. W. Linholm, R. Allen, M. Fallon, A. Gundlach

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引用次数: 3

摘要

研究了用于低成本二次参考线宽标准的轻掺杂单晶硅结构中的电流流动。结果表明，表面电荷对线宽测试结构的测量有显著影响。研究了表面电荷对希腊十字结构的影响，并演示了栅极对薄片电阻提取值的影响。结果证实，这两个测量结果的不确定度可以通过在制造过程中简并掺杂硅来克服。

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Analysis of current flow in mono-crystalline electrical linewidth structures

The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on <110> Greek cross structures is also investigated and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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