噪声参数去嵌入对 MOSFET 高频噪声建模的影响

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766212

M. Deen, Chih-Hung Chen

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引用次数: 21

摘要

本文讨论了 n-MOSFET 中噪声参数去嵌的影响。本文介绍了一种从测量噪声参数（最小噪声系数 NF/sub min/、等效噪声阻抗 R/sub n/和优化源反射系数 /spl Gamma//sub opt/）中直接去嵌入寄生焊盘效应的方法，以及噪声参数去嵌入对 MOSFET 高频噪声建模的影响。此外，还介绍了使用基于物理的焊盘模型进行噪声参数去嵌入的方法。最后，比较了两种方法的结果。

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The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs

This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF/sub min/, equivalent noise resistance R/sub n/, and optimized source reflection coefficient /spl Gamma//sub opt/) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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