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引用次数: 9
摘要
一种允许自动表征阈下驼峰效应的新方法(salagoity et al.， IEEE TED vol. 43, no. 5)。(11, pp. 1900-6, 1996)。它利用了基于驼峰模型观测结果的变量变换。该模型考虑两个具有不同阈值电压的子晶体管并联。提取的参数包括驼峰效应大小、弱反转斜率和外推V/sub g/=0 V时的泄漏电流。在自动测试系统中实施后，该程序已成功应用于Crolles中心公社的0.25 /spl mu/m技术。验证了该方法的有效性和可靠性，无论操作偏差和温度如何。该方法是监测和研究驼峰效应的有效工具。
Contribution to the characterization of the hump effect in MOSFET submicronic technologies
A new method allowing the automatic characterization of the subthreshold hump effect (Sallagoity et al., IEEE TED vol. 43, no. 11, pp. 1900-6, 1996) is presented in this paper. It makes use of a variable transformation based on observations made with a hump model. This model considers two sub-transistors with different threshold voltages in parallel. The extracted parameters are the hump effect magnitude, the weak inversion slope and the extrapolated leakage current at V/sub g/=0 V. After implementation in our automatic test system, the routine has been successfully applied to the 0.25 /spl mu/m technology of the Crolles Centre Commun. The efficiency and reliability of this routine are demonstrated whatever the operating bias and temperature. It is noticed that this method is a useful tool to monitor and study the hump effect.
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