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2010 27th International Conference on Microelectronics Proceedings最新文献

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Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT) 温度对AlGaN/GaN高电子迁移率晶体管(HEMT)中二维量子阱电流的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490501
R. Yahyazadeh, Z. Hashempour
{"title":"Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)","authors":"R. Yahyazadeh, Z. Hashempour","doi":"10.1109/MIEL.2010.5490501","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490501","url":null,"abstract":"An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in HEMTs has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also take in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs device.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124303117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of Au/C60/n-Si photodiode structures with pristine and dithioloctane-functionalized C60 nanolayers 原始和二硫代辛烷功能化C60纳米层Au/C60/n-Si光电二极管结构的电学性质
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490508
N. Dmitruk, O. Borkovskaya, D. Naumenko, E. Basiuk, Z. Horváth
{"title":"Electrical properties of Au/C60/n-Si photodiode structures with pristine and dithioloctane-functionalized C60 nanolayers","authors":"N. Dmitruk, O. Borkovskaya, D. Naumenko, E. Basiuk, Z. Horváth","doi":"10.1109/MIEL.2010.5490508","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490508","url":null,"abstract":"The dithioloctane-treatment of C60 film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C60/n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C60 interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C60 layer did not change the mechanisms of the in current flow in Au/C60/n-Si structure, specifically, in a decrease of the series resistance, determined by C60 layer, and in a decrease of the effective height of barrier for the reverse current flow.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124776640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and simulation of D-latch and multiplexer using vMOS 基于vMOS的d锁存器和多路复用器的设计与仿真
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490469
Rohit Kumar, Arvind Kumar
{"title":"Design and simulation of D-latch and multiplexer using vMOS","authors":"Rohit Kumar, Arvind Kumar","doi":"10.1109/MIEL.2010.5490469","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490469","url":null,"abstract":"Threshold mismatch in a circuit can severely impair the proper functioning of the circuit. vMOS is a device that by its design has an adjustable threshold. Thus in circuits design using vMOS, the threshold mismatch problem can be addressed in a simple manner. Further, because vMOS devices can realize the soft-hardware logic, it adds to the versatility of the design.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128444118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling floating body Z-RAM storage cells 模拟浮动体Z-RAM存储单元
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490533
V. Sverdlov, S. Selberherr
{"title":"Modeling floating body Z-RAM storage cells","authors":"V. Sverdlov, S. Selberherr","doi":"10.1109/MIEL.2010.5490533","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490533","url":null,"abstract":"Advanced floating body Z-RAM memory cells are studied. In particular, the scalability of the cells is investigated. First, a Z-RAM cell based on a 50nm gate length double-gate structure corresponding to state of the art technology is studied. A bi-stable behavior essential for Z-RAM operation is observed even in fully depleted structures. It is demonstrated that by adjusting the supply source-drain and gate voltages the programming window can be adjusted. The programming window is appropriately large in voltage as well as in current. We further extend our study to a Z-RAM cell based on an ultra-scaled double-gate MOSFET with 12.5nm gate length. We demonstrate that the cell preserves its functionality by providing a wide voltage operating window with large current differences. An appropriate operating window is still observed at approximately 25–30% reduced supply voltage, which is an additional benefit of scaling. The relation of the obtained supply voltage to the one anticipated in an ultimate MOSFET with quasi-ballistic transport is discussed.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128717689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal modelling of electronic systems based on spectral analysis of circuit temperature response 基于电路温度响应谱分析的电子系统热建模
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490460
M. Janicki, J. Banaszczyk, M. Szermer, G. De Mey, A. Napieralski
{"title":"Thermal modelling of electronic systems based on spectral analysis of circuit temperature response","authors":"M. Janicki, J. Banaszczyk, M. Szermer, G. De Mey, A. Napieralski","doi":"10.1109/MIEL.2010.5490460","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490460","url":null,"abstract":"This paper discusses the problem of determining a thermal model of an electronic system based on the spectral analysis of its step temperature response. The proposed method yields equivalent RC Cauer ladder thermal models, which consist of only a few RC stages, but produce very accurate estimates of circuit temperature. Moreover, the values of model elements have physical significance. Such a thermal model can be easily used in the SPICE simulator for joint electro-thermal simulations of an electronic system. The entire process of the reduced model creation is illustrated in the paper on the practical example of an ASIC packaged and soldered to a PCB.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128755342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures 有限温度下δ掺杂量子阱的Thomas - Fermi法电子能谱
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490520
V. Grimalsky, L. M. Gaggero-S., S. Koshevaya, A. García-b.
{"title":"Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures","authors":"V. Grimalsky, L. M. Gaggero-S., S. Koshevaya, A. García-b.","doi":"10.1109/MIEL.2010.5490520","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490520","url":null,"abstract":"Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas — Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 10<sup>13</sup>…2×10<sup>13</sup> cm<sup>−2</sup>, the simplest TF method (T = 0) can be used up till the temperatures T ≤200 K.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128663580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Effect of the grain size on the structural and optical properties of the sprayed CdxZn1-xS films 晶粒尺寸对喷涂CdxZn1-xS薄膜结构和光学性能的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490504
M. Öztaş, Z. Özturk, M. Bedir, S. Sür
{"title":"Effect of the grain size on the structural and optical properties of the sprayed CdxZn1-xS films","authors":"M. Öztaş, Z. Özturk, M. Bedir, S. Sür","doi":"10.1109/MIEL.2010.5490504","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490504","url":null,"abstract":"Cd<sub>x</sub>Zn<sub>1-x</sub>S films were obtained with incorporation of Cd element into ZnS at different concentrations (0≤x≤1) by spray pyrolysis technique using aqueous solutions of CdCl<sub>2</sub>, ZnCl<sub>2</sub> and (CS(NH)<sub>2</sub>)<sub>2</sub>, which were atomized with compressed air as carrier gas. The CdxZn1-xS films were obtained on glass substrates at substrate temperatures of 400°C. Effects of the grain size of the films on structural and optical properties of sprayed cadmium zinc sulfide (CdZnS) films were investigated. It was seen that the crystallinity level of the films increased. with increasing x composition and grain size.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127088043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Benchmarking of HBT models for InP based DHBT modeling 基于InP的DHBT建模中HBT模型的基准测试
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490456
S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G. A. Koné
{"title":"Benchmarking of HBT models for InP based DHBT modeling","authors":"S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G. A. Koné","doi":"10.1109/MIEL.2010.5490456","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490456","url":null,"abstract":"In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127126331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Virtual instrumentation software applied to integrated circuit testing procedure 虚拟仪器软件应用于集成电路测试程序
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490465
B. Dimitrijević, M. Simić
{"title":"Virtual instrumentation software applied to integrated circuit testing procedure","authors":"B. Dimitrijević, M. Simić","doi":"10.1109/MIEL.2010.5490465","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490465","url":null,"abstract":"Laboratory measurement and acquisition system based on the LabVIEW virtual instrumentation software package, applied to automated procedure for integrated circuit parameter testing, is presented in this paper. Described software controlled procedure is performed on CMOS inverter integrated circuit HCF 4007 UB Hardware configuration of developed solution includes data acquisition card PCI NI 6251 and model of tested integrated circuit, controlled by LabVIEW programming application in PC environment. Multi-channel acquisition card provides generation of test voltage waveforms for inverter circuit inputs and receives voltage signals from integrated circuit outputs. Control software application, developed in LabVIEW 8.0 programming package, performs automated recording and presentation of circuit transfer characteristics, recorded for different supply voltages, including measurement, software analysis and graphic presentation of basic circuit parameters, according to user requirements. This solution eliminates demands for manual measurement of output voltage for each input voltage changing point in circuit transfer characteristic recording procedures, due to providing complete software based automation of these processes. Such approach gives possibility for development of software controlled automated test subsystem or measurement module applicable as a part of more complex ATE systems used in integrated circuit industry production and testing.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127420813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM 纳米电子电路中的量子力学隧穿:纳米电子单电子RAM的设计
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490538
Paul Isaac Hagouel, I. Karafyllidis
{"title":"Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM","authors":"Paul Isaac Hagouel, I. Karafyllidis","doi":"10.1109/MIEL.2010.5490538","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490538","url":null,"abstract":"Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130253406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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