{"title":"纳米电子电路中的量子力学隧穿:纳米电子单电子RAM的设计","authors":"Paul Isaac Hagouel, I. Karafyllidis","doi":"10.1109/MIEL.2010.5490538","DOIUrl":null,"url":null,"abstract":"Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM\",\"authors\":\"Paul Isaac Hagouel, I. Karafyllidis\",\"doi\":\"10.1109/MIEL.2010.5490538\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.\",\"PeriodicalId\":271286,\"journal\":{\"name\":\"2010 27th International Conference on Microelectronics Proceedings\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 27th International Conference on Microelectronics Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2010.5490538\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 27th International Conference on Microelectronics Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2010.5490538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM
Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.