纳米电子电路中的量子力学隧穿:纳米电子单电子RAM的设计

Paul Isaac Hagouel, I. Karafyllidis
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引用次数: 1

摘要

单电子学是一种纳米电子技术,它使控制单个或少量电子的传输和位置成为可能。单电子的基本物理原理是量子力学隧穿和库仑封锁。信息位由导电岛中单个或少量电子的存在或缺失来表示。介绍了两个基本单电子门和基本存储单元的设计和工作原理。在此基础上,设计了单电子随机存取存储器阵列,并利用蒙特卡罗仿真对其工作进行了分析。仿真结果表明,该存储器阵列可实现选择性读写操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM
Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.
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