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2010 27th International Conference on Microelectronics Proceedings最新文献

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Structural and microhardness characterization of thin electrodeposited Ni/Cu multilayers on copper substrates 铜基底电沉积Ni/Cu多层薄膜的结构和显微硬度表征
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490498
J. Lamovec, V. Jović, B. Popović, D. Vasiljević-Radović, R. Aleksić, V. Radojević
{"title":"Structural and microhardness characterization of thin electrodeposited Ni/Cu multilayers on copper substrates","authors":"J. Lamovec, V. Jović, B. Popović, D. Vasiljević-Radović, R. Aleksić, V. Radojević","doi":"10.1109/MIEL.2010.5490498","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490498","url":null,"abstract":"Multilayered composite systems of alternately electrodeposited nanocrystalline Cu and Ni films on cold-rolled microcrystalline copper substrates were fabricated. Highly-densified parallel interfaces which can give rise to high strength of composites are obtained by depositing layers at a very narrow spacing. The mechanical properties of the composite systems were characterized using Vickers microhardness testing with loads ranging from 1.96 N down to 0.049 N. Dependence of microhardness on layer thickness, Ni/Cu layer thickness ratio and total thickness of the film was investigated. The microhardness increased with decreasing the layer thickness down to 30 nm and it is consistent with the Hall-Petch relation. Composite hardness model of Korsunsky was applied to the experimental data in order to determine the composite film hardness. The highest value of all the composite film hardness values was obtained when the ratio of Ni : Cu layer thickness was 4:1.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125241294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design of rad-hard SRAM cells: A comparative study 抗辐射SRAM单元的设计:比较研究
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490481
Marcello Benigni, V. Liberali, A. Stabile, C. Calligaro
{"title":"Design of rad-hard SRAM cells: A comparative study","authors":"Marcello Benigni, V. Liberali, A. Stabile, C. Calligaro","doi":"10.1109/MIEL.2010.5490481","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490481","url":null,"abstract":"This paper presents the design of three static RAM cells, designed to be radiation hard. The memory cells are designed with three different approaches and layout styles. Three memory arrays, each of them made with a different cell, were designed and simulated to optimize the transistor sizes. The layout of the cells has been drawn, and parasitic elements were extracted to analyze their impact on circuit performance. Simulation results demonstrate that the three cells are functional in all worst case corners. The sensitivity of each cell to single events has been estimated using a fault injection technique. A silicon prototype employing the first cell has been fabricated and characterized.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115201585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
TCAD modeling of NPN-SiGe-HBT electrical performance improvement through extrinsic stress layer 通过外部应力层改善NPN-SiGe-HBT电性能的TCAD建模
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490457
M. Al-Sa'di, S. Frégonèse, C. Maneux, T. Zimmer
{"title":"TCAD modeling of NPN-SiGe-HBT electrical performance improvement through extrinsic stress layer","authors":"M. Al-Sa'di, S. Frégonèse, C. Maneux, T. Zimmer","doi":"10.1109/MIEL.2010.5490457","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490457","url":null,"abstract":"The impact of introducing an extrinsic stress layer to NPN-SiGe-HBT device on the electrical properties and frequency response has been studied using TCAD modeling. Simulations based on Hydrodynamic (HD) and Drift-Diffusion (DD) models have been carried out to clarify the influence of adding the extrinsic stress layer on the device electrical performance (static and dynamic). Simulation results show that NPN-SiGe-HBT device with extrinsic stress layer exhibit better frequency characteristics in comparison with equivalent conventional HBT device (without extrinsic stress layer). An approximately, 3% improvement in ft, and 5% improvement in fmax have been achieved. In addition to that, a decrease in the transit time of the device has been observed. That can be fully accounted to the influence of introducing the extrinsic stress layer on the device.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115256109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design of symmetric planar fishnet metamaterials for optical wavelength range 波长范围内对称平面鱼网超材料的设计
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490509
Z. Jakšić, D. Tanasković, J. Matovic
{"title":"Design of symmetric planar fishnet metamaterials for optical wavelength range","authors":"Z. Jakšić, D. Tanasković, J. Matovic","doi":"10.1109/MIEL.2010.5490509","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490509","url":null,"abstract":"In this work we analyze fishnet-type optical metamaterials with full electromagnetic symmetry, fabricated in an ultrathin, freestanding film (self-supported nanomembrane). We utilized the finite element method to simulate the response of various laminar fishnet geometries, including metal-dielectric-metal and dielectric-metal-dielectric-metal-dielectric multilayers. We varied metal and dielectric thickness, nanoaperture radius, metal and dielectric materials. We considered the tunability of the spectral characteristics of the fishnet by bringing a dielectric analyte in contact with its exposed surfaces. Such tunability is of importance for all-optical sensors of chemical or biological analytes, but also for the performance of general fishnet nanoaperture arrays in real operating conditions, where the introduction of the ambient gases and fluids will modify their plasmonic properties.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122612077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoelectric ceramics by powder injection molding 压电陶瓷采用粉末注射成型
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490494
I. Stanimirović, Z. Stanimirović
{"title":"Piezoelectric ceramics by powder injection molding","authors":"I. Stanimirović, Z. Stanimirović","doi":"10.1109/MIEL.2010.5490494","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490494","url":null,"abstract":"Lead zirconate titanate (PbZrTiO3) and barium titanate (BaTiO3) samples were fabricated using ceramic powder injection molding method (CIM). Piezoelectric CIM samples were characterized and it is shown that obtained properties are satisfactory and comparable to those found in literature. This shows that it is feasibile to synthesise piezoelectric ceramics with good dielectric and piezoelectric properties using CIM method.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"52 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116834282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Comparisons of noise spectroscopy analyze and microplasma noise sources 噪声光谱分析与微等离子体噪声源的比较
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490442
J. Vaněk, J. Dolensky, Z. Chobola, M. Luňák
{"title":"Comparisons of noise spectroscopy analyze and microplasma noise sources","authors":"J. Vaněk, J. Dolensky, Z. Chobola, M. Luňák","doi":"10.1109/MIEL.2010.5490442","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490442","url":null,"abstract":"As it was the mechanical noise used for diagnostic of machine in the past, the electronic noise can be used as diagnostic tool for detection defects in electronical devices and systems in the future. This paper deals with comparisons of noise spectroscopy and detection of microplasma noise sources in the three new type of solar cells G1, G3 and G5. When high electric is applied to PN junction with some technological imperfections like dislocation in PN junction or crystal-grid defect causing non-homogeneity of parameters it produces in tiny areas of enhanced impact ionization called microplasma. It can leads onwards to deterioration in quality or to destruction of PN junction. Microplasma produced noise, which has random spectrum in frequency range. Microplasma noise is measurable even before the creation of light emissions. Due to the comparisons microplasma detection with noise characteristic can full analyzed solar cell.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129870331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of re-crystallization processes in amorphous silicon films 非晶硅薄膜再结晶过程的研究
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490488
V. Vavruňková, M. Netrvalová, L. Prusakova, J. Mullerová, P. Šutta
{"title":"Study of re-crystallization processes in amorphous silicon films","authors":"V. Vavruňková, M. Netrvalová, L. Prusakova, J. Mullerová, P. Šutta","doi":"10.1109/MIEL.2010.5490488","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490488","url":null,"abstract":"Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using “in-situ” X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121290725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Synthesis of orthogonal systolic arrays for fault-tolerant matrix multiplication 容错矩阵乘法正交收缩阵列的合成
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490472
M. Stojcev, E. Milovanovic, S. Marković, I. Milovanovic
{"title":"Synthesis of orthogonal systolic arrays for fault-tolerant matrix multiplication","authors":"M. Stojcev, E. Milovanovic, S. Marković, I. Milovanovic","doi":"10.1109/MIEL.2010.5490472","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490472","url":null,"abstract":"This paper presents a procedure for designing fault-tolerant systolic array with orthogonal interconnects and bidirectional data flow (2DBOSA) for matrix multiplication. The method employs space-time redundancy to achieve fault-tolerance. The obtained array has Ω = n(n+2) processing elements, and total execution time of Ttot = 6n -5. The array can tolerate single transient errors and the majority of multiple error patterns with high probability. Compared to hexagonal array of same dimensions, the number of I/O pins is reduced for approximately 30%.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132508810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Perspective on Power IC technology: From design lab to wafer fab 电源集成电路技术展望:从设计实验室到晶圆厂
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490529
P. Igić, M. Elwin, P. Holland
{"title":"Perspective on Power IC technology: From design lab to wafer fab","authors":"P. Igić, M. Elwin, P. Holland","doi":"10.1109/MIEL.2010.5490529","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490529","url":null,"abstract":"A case study regarding development of a 100V Power IC technology is presented in this paper. A combination of conventional cross sectional process and device simulations combined with top down and 3D device simulations have been used to design and optimise the integration of a 100V Lateral DMOS (LDMOS) device for high side bridge applications. This combined simulation approach can streamline the device design process and gain important information about end effects which are lost from 2D cross sectional simulations. Design solutions to negate detrimental end effects are proposed and optimised by top down and 3D simulations and subsequently proven on tested silicon. Different electrical isolation schemes have also been investigated.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130168988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Model based performance estimation in ZigBee based wireless sensor networks ZigBee无线传感器网络中基于模型的性能估计
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490475
F. Lohse, V. Zerbe
{"title":"Model based performance estimation in ZigBee based wireless sensor networks","authors":"F. Lohse, V. Zerbe","doi":"10.1109/MIEL.2010.5490475","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490475","url":null,"abstract":"Within the main research in the area of the wireless sensor networks (WSN's) performance values like throughput, energy consumption, network load, treatment time or memory usage become an important role. The early analysis of these values allows conclusions with regard to the realizability of the radio technology in relation to possible application areas. ZigBee as the best known representative of the WSN technologies is focused in this paper. Parts of the ZigBee specification are transformed in an abstract executable model. Using this model performance analyses can be done. As a technical platform for validation against model results ZEBRA2411-SM-modules1 are used for a series of field measurements.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132615734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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