Benchmarking of HBT models for InP based DHBT modeling

2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI:10.1109/MIEL.2010.5490456

S. Ghosh, T. Zimmer, B. Ardouin, C. Maneux, S. Frégonèse, F. Marc, B. Grandchamp, G. A. Koné

引用次数: 3

Abstract

In this paper the modeling results of a given InP/InGaAs/InP DHBT technology (0.7 × 7 μm emitter area) have been shown with two advanced compact models, HICUM L0 and Agilent HBT. Shortcomings of these models have been pointed out and their suitability for modeling these high frequency devices has been discussed.

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基于InP的DHBT建模中HBT模型的基准测试

本文用HICUM L0和Agilent HBT两种先进的紧凑型模型展示了给定的InP/InGaAs/InP DHBT技术(0.7 × 7 μm发射极面积)的建模结果。指出了这些模型的不足，并讨论了它们对高频器件建模的适用性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 27th International Conference on Microelectronics Proceedings

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