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2010 27th International Conference on Microelectronics Proceedings最新文献

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AADL modeling of M2M terminal M2M终端的AADL建模
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490462
A. Prijić, Z. Prijić, D. Vuckovic, A. Stanimirovic
{"title":"AADL modeling of M2M terminal","authors":"A. Prijić, Z. Prijić, D. Vuckovic, A. Stanimirovic","doi":"10.1109/MIEL.2010.5490462","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490462","url":null,"abstract":"This paper presents the application of Architecture Analysis and Design Language (AADL) for the modeling of Machine to Machine talk (M2M) terminal. Examined terminal is used in telemetry, utilizing GSM network and GPRS/EDGE services for the data transmission. The AADL model is used to apply mapping of the embedded software to the hardware of the terminal. Embedded software is designed as a multi-threaded application. Threads are described using AADL at the system level and through their implementations. Interaction between the threads is also discussed in terms of AADL behavior analysis.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131713943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A low-voltage CMOS voltage-controlled resistor with wide resistance dynamic range 一种具有宽电阻动态范围的低压CMOS压控电阻器
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490470
N. Tadić, Milena Zogovic
{"title":"A low-voltage CMOS voltage-controlled resistor with wide resistance dynamic range","authors":"N. Tadić, Milena Zogovic","doi":"10.1109/MIEL.2010.5490470","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490470","url":null,"abstract":"A 0.5 μm CMOS floating voltage-controlled resistor with wide resistance dynamic range and low supply voltage is presented. The current inputs of two second generation current conveyors are loaded by non-saturated MOSFET with controllable resistance. Both a quasi rail-to-rail operation and a wide resistance dynamic range, with large resistances, are achieved using the input signal adapters. For a single supply of 1.5 V and a range of input voltage from 0.2 V to 1.3 V, simulations show a linearity error smaller than 3.9 %, a resistance dynamic range of 250 (48 dB) with the largest resistance of 25.5 MΩ, and power consumption less than 0.1 mW.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126634488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Rise time and dwell time impact on Triac solder joints lifetime during power cycling 电源循环过程中上升时间和停留时间对可控硅焊点寿命的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490450
S. Jacques, P. M. Diack, N. Batut, R. Leroy, L. Gonthier
{"title":"Rise time and dwell time impact on Triac solder joints lifetime during power cycling","authors":"S. Jacques, P. M. Diack, N. Batut, R. Leroy, L. Gonthier","doi":"10.1109/MIEL.2010.5490450","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490450","url":null,"abstract":"In this paper, we analyze the rise time and dwell time impact on 16A–600V high temperature Triacs reliability subjected to power cycling. Experimental tests, performed on two TO-220 packages (insulated or not), show that rise time and dwell time have a negligible contribution on Triacs lifetime. Failure analysis confirms that the physical failure mode (the die-attach fatigue) and the failure location (the solder joints) are similar when rise and dwell durations change. Thermo-mechanical simulations (ANSYS®) were performed to get a better understanding of the effects of various ramp and dwell values on solder joints plastic work and shear stress.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122983288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrical measurements in nanotechnology using single electron bipolar avalanche transistors 纳米技术中使用单电子双极雪崩晶体管的电测量
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490534
R. Popovic, Marc Lany
{"title":"Electrical measurements in nanotechnology using single electron bipolar avalanche transistors","authors":"R. Popovic, Marc Lany","doi":"10.1109/MIEL.2010.5490534","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490534","url":null,"abstract":"Based on a simple model, we estimate that a nonoscopic device consisting of a low-conductivity material, such as biological tissue, may have resistances higher than 100GΩ. Such a device must be characterized with currents smaller than 1pA. Small currents can be measured by counting single electrons. In this paper, we estimate some physical limits related to such current measurements. Then we propose a system for electrical measurements of high resistance nano-devices based on the single electron bipolar avalanche transistor (SEBAT). The system functions as a source-measure-unit, at room temperature, at the currents from an atto-ampere to pico-amperes, and with high resolution.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"9 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113955122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On p-n junction depletion capacitance parameter extraction strategies p-n结耗尽电容参数提取策略研究
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490528
V. Milovanovic, R. van der Toorn
{"title":"On p-n junction depletion capacitance parameter extraction strategies","authors":"V. Milovanovic, R. van der Toorn","doi":"10.1109/MIEL.2010.5490528","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490528","url":null,"abstract":"Two strategies for extraction of p-n junction's depletion capacitance compact model parameters are identified and compared by the present paper. Applying these in a numerical experiment and device measurements, it is demonstrated that the reproducibility of the estimated parameter values can strongly depend on the extraction strategy applied within the nonlinear regression procedure. An approach to assess statistical properties of parameter extraction strategies is presented and the merits of such assessments are shown.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115378884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Properties of Al doped Ta2O5 based MIS capacitors for DRAM applications 用于DRAM的掺铝Ta2O5基MIS电容器的性能
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490443
A. Skeparovski, N. Novkovski, D. Spassov, E. Atanassova, V. Lazarov
{"title":"Properties of Al doped Ta2O5 based MIS capacitors for DRAM applications","authors":"A. Skeparovski, N. Novkovski, D. Spassov, E. Atanassova, V. Lazarov","doi":"10.1109/MIEL.2010.5490443","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490443","url":null,"abstract":"Al doped Ta<inf>2</inf>O<inf>5</inf> (4; 11; 15 nm) stacks on nitrided Si obtained by rf sputtering were studied with respect to their structural, dielectric and electrical properties. Results show that the initial double-layer structure (doped Ta<inf>2</inf>O<inf>5</inf> and interfacial SiON layer) transforms during the formation of the top Al electrode into a three-layer structure, which contains an additional layer between the Al electrode and the doped Ta<inf>2</inf>O<inf>5</inf>. It affects the dielectric properties of the stacks, deteriorating the equivalent oxide thickness (EOT). A satisfactory low level of leakage current (< 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm) is obtained in all samples. The current is mainly governed by Poole-Frenkel effect with high level of compensation, reflecting the influence of Al incorporation into the Ta<inf>2</inf>O<inf>5</inf> films on their leakage properties.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116707331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
BLDC motor driver — Development of control and power electronics 无刷直流电机驱动器-控制和电力电子技术的发展
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490467
Damir Krkljes, Ć Morvai, K. Babković, L. Nagy
{"title":"BLDC motor driver — Development of control and power electronics","authors":"Damir Krkljes, Ć Morvai, K. Babković, L. Nagy","doi":"10.1109/MIEL.2010.5490467","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490467","url":null,"abstract":"This paper presents the development of control and power electronics parts for a BLDC motor drive. The signals from the most commonly used sensors for this application are used. The first one is the incremental encoder for speed and relative position detection, the other one is the three-signal Hall sensor which provides information about the absolute rotor position needed for electronic commutation. The contemporary three phase bridge driver integrated circuit used in this application provides good protection functionality to protect the bridge and the motor from excessive currents and short-circuit conditions. Hardware instead of software implementation of electronic commutation is implemented to provide more reliability. Both unipolar and bipolar PWM schemes are implemented. Besides the driver explanation, experimental results concerning speed and position control are presented.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121463023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
BJT static behavior improvement by modification of the epitaxial layer 外延层改性改善BJT静态性能
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490530
L. Théolier, L. Phung, N. Batut, A. Schellmanns, Y. Raingeaud, J. Quoirin
{"title":"BJT static behavior improvement by modification of the epitaxial layer","authors":"L. Théolier, L. Phung, N. Batut, A. Schellmanns, Y. Raingeaud, J. Quoirin","doi":"10.1109/MIEL.2010.5490530","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490530","url":null,"abstract":"In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like “superjunctions” and “floating islands” improve the static current gain without unwanted behavior like parasitic diodes.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"105 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124178894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Injection molded Mn-Zn ferrite ceramics 注射成型锰锌铁氧体陶瓷
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490493
Z. Stanimirović, I. Stanimirović
{"title":"Injection molded Mn-Zn ferrite ceramics","authors":"Z. Stanimirović, I. Stanimirović","doi":"10.1109/MIEL.2010.5490493","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490493","url":null,"abstract":"Ceramic injection molding was used in production of Mn-Zn ferrite specimens with structural integrity, densities similar to conventionally produced material and satisfactory magnetic properties when compared to magnetic properties of conventionally produced Mn-Zn ferrites. Injection molded material exhibited high green-state strength allowing the production of complex and delicate shapes.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124653122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A comparative numerical simulation of a nanoscaled body on Insulator FinFET 在绝缘体FinFET上的纳米体比较数值模拟
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490451
A. Anwar, Imran Hossain
{"title":"A comparative numerical simulation of a nanoscaled body on Insulator FinFET","authors":"A. Anwar, Imran Hossain","doi":"10.1109/MIEL.2010.5490451","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490451","url":null,"abstract":"In this paper a FinFET structure with channel region insulated from body by buried oxide(Body Over Insulator) is proposed. Body Over Insulator (BOI) FinFET has advantage over both Silicon Over Insulator(SOI) and Bulk FinFETs. Here, a comparative numerical study of a BOI FinFET, a bulk FinFET and a SOI FinFET is presented. The result have shown that, the proposed BOI FinFET has better short channel effect(SCE) suppression and a lower threshold voltage than bulk FinFET. Better heat dissipation capability by virtue of a smaller insulation, ease of fabrication and acceptable SCE suppression makes this structure a viable competitor of the SOI structure.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128830129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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