A. Skeparovski, N. Novkovski, D. Spassov, E. Atanassova, V. Lazarov
{"title":"Properties of Al doped Ta2O5 based MIS capacitors for DRAM applications","authors":"A. Skeparovski, N. Novkovski, D. Spassov, E. Atanassova, V. Lazarov","doi":"10.1109/MIEL.2010.5490443","DOIUrl":null,"url":null,"abstract":"Al doped Ta<inf>2</inf>O<inf>5</inf> (4; 11; 15 nm) stacks on nitrided Si obtained by rf sputtering were studied with respect to their structural, dielectric and electrical properties. Results show that the initial double-layer structure (doped Ta<inf>2</inf>O<inf>5</inf> and interfacial SiON layer) transforms during the formation of the top Al electrode into a three-layer structure, which contains an additional layer between the Al electrode and the doped Ta<inf>2</inf>O<inf>5</inf>. It affects the dielectric properties of the stacks, deteriorating the equivalent oxide thickness (EOT). A satisfactory low level of leakage current (< 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm) is obtained in all samples. The current is mainly governed by Poole-Frenkel effect with high level of compensation, reflecting the influence of Al incorporation into the Ta<inf>2</inf>O<inf>5</inf> films on their leakage properties.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 27th International Conference on Microelectronics Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2010.5490443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al doped Ta2O5 (4; 11; 15 nm) stacks on nitrided Si obtained by rf sputtering were studied with respect to their structural, dielectric and electrical properties. Results show that the initial double-layer structure (doped Ta2O5 and interfacial SiON layer) transforms during the formation of the top Al electrode into a three-layer structure, which contains an additional layer between the Al electrode and the doped Ta2O5. It affects the dielectric properties of the stacks, deteriorating the equivalent oxide thickness (EOT). A satisfactory low level of leakage current (< 10−7 A/cm2 at 1 MV/cm) is obtained in all samples. The current is mainly governed by Poole-Frenkel effect with high level of compensation, reflecting the influence of Al incorporation into the Ta2O5 films on their leakage properties.
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