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2010 27th International Conference on Microelectronics Proceedings最新文献

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Investigation of dielectric — Semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te 基于p-Hg0.8Cd0.2Te的MIS结构中介电-半导体界面的研究
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490515
V. Damnjanović, J. Elazar
{"title":"Investigation of dielectric — Semiconductor interface in MIS structures based on p-Hg0.8Cd0.2Te","authors":"V. Damnjanović, J. Elazar","doi":"10.1109/MIEL.2010.5490515","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490515","url":null,"abstract":"In this paper we describes technological processes for the stabilization of interface between p-Hg<sub>1-x</sub>Cd<sub>x</sub> and dielectric. Native oxide and native fluoride, as well as Al<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub>, have been applied as dielectrics. Influence of technological parameters used in dielectric layers production on interface charge densities was studied. Characterization of the produced structures has been carried out by analyzing their C/V diagrams. Based on the characterization results, the choice of the most suitable values of technological parameters for each dielectric has been made, thus enabling achievement of low values of the interface charges density. Produced tunnel MIS photo detectors show clearly exhibited dependence of Schottky barrier height on the metal used and specific detectivity as high as 5 × 10<sup>10</sup> cm·Hz<sup>1/2</sup>W<sup>-1</sup>.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"451 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115286163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PALS as characterization tool in application to humidity-sensitive electroceramics PALS作为湿敏电陶瓷表征工具的应用
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490492
H. Klym, A. Ingram, O. Shpotyuk, J. Filipecki
{"title":"PALS as characterization tool in application to humidity-sensitive electroceramics","authors":"H. Klym, A. Ingram, O. Shpotyuk, J. Filipecki","doi":"10.1109/MIEL.2010.5490492","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490492","url":null,"abstract":"It is shown that positron annihilation lifetime spectroscopy is a quite promising tool for nanostructural characterisation of humidity-sensitive spinel-type MgAl2O4 ceramics, the results being achieved provided four-component fitting procedure with arbitrary lifetimes is applied to treat mathematically the measured spectra. It is shown that Tao-Eldrup model is adequate for calculation of nanopore size in MgAl2O4 ceramics using lifetime values of the third and four components.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126400297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Extraction of thermal model parameters for field-installed photovoltaic module 现场安装光伏组件热模型参数提取
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490512
W. Marańda, M. Piotrowicz
{"title":"Extraction of thermal model parameters for field-installed photovoltaic module","authors":"W. Marańda, M. Piotrowicz","doi":"10.1109/MIEL.2010.5490512","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490512","url":null,"abstract":"Performance of PV-system strongly depends on climate variables. In less favourable climate conditions, as in Central Europe, highly varying radiation is very frequent. In such consitions, the accurate energy yield predictions from PV-systems require more accurate thermal modelling, than simple industry-standard approach based on single NOCT parameter. The paper demonstrates the method for extraction of parameters for simple RC-thermal model from measurements of field-installed photovoltaic module. The calculated RC-thermal time constant allows to recognize the climatic conditions requiring careful thermal modelling. Moreover, in order to satisfy the simplicity of PV-simulations, as an alternative to the RC-model, the idea of simplified approach to handling variable radiation conditions has also been proposed.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124967435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
The effect of depletion layer on the cut off frequency of AlGaN/GaN high electron mobility transistors 耗尽层对AlGaN/GaN高电子迁移率晶体管截止频率的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490507
R. Yahyazadeh, Z. Hashempour
{"title":"The effect of depletion layer on the cut off frequency of AlGaN/GaN high electron mobility transistors","authors":"R. Yahyazadeh, Z. Hashempour","doi":"10.1109/MIEL.2010.5490507","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490507","url":null,"abstract":"An analytical model for I-V characteristics of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of depletion layer thickness on the cut off frequency in drain currents, gate biases and gate length. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. The calculated model results are in very good agreement with existing experimental data for AlGaN/GaN based HEMTs device.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131565605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of GaN-based MOS structures with different interfacial layer treatments 不同界面层处理氮化镓基MOS结构的比较
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490444
E. Al Alam, I. Cortés, M. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazarré, Y. Cordier, K. Isoird, F. Olivié
{"title":"Comparison of GaN-based MOS structures with different interfacial layer treatments","authors":"E. Al Alam, I. Cortés, M. Besland, P. Regreny, A. Goullet, F. Morancho, A. Cazarré, Y. Cordier, K. Isoird, F. Olivié","doi":"10.1109/MIEL.2010.5490444","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490444","url":null,"abstract":"In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 °C) on an N-type GaN epitaxial layer using different technological procedures have been performed to analyze the quality and reliability of the resultant SiO2/GaN interface in MOS structures. C-V measures at different temperatures have been also performed to analyze the pyroelectric effect in all the GaN samples.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133387841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanoscaling of MOSFETs and the implementation of Schottky barrier S/D contacts mosfet的纳米化和肖特基势垒S/D触点的实现
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490540
M. Ostling, Jun Luo, V. Gudmundsson, P. Hellstrom, B. Malm
{"title":"Nanoscaling of MOSFETs and the implementation of Schottky barrier S/D contacts","authors":"M. Ostling, Jun Luo, V. Gudmundsson, P. Hellstrom, B. Malm","doi":"10.1109/MIEL.2010.5490540","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490540","url":null,"abstract":"This paper provides an overview of metallic source/drain (MSD) Schottky-barrier (SB) MOSFET technology. This technology offers several benefits for scaling CMOS, i.e., extremely low S/D series resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of this technology needs to overcome new obstacles such as Schottky barrier height (SBH) engineering and careful control of SALICIDE process. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. Recently, we have invested a lot of efforts on Pt- and Ni-silicide MSD SB-MOSFETs and achieved some promising results. The present work, together with the work of other groups in this field, places silicide MSD SB-MOSFETs as a competitive candidate for future generations of CMOS technology.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133804136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Effect of variations in blend preparation on the properties of P3HT:PCBM blend solar cells 混合制备工艺对P3HT:PCBM混合太阳能电池性能的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490514
M. Estrada, V. Balderrama, J. Albero, J. Nolasco, A. Cerdeira, L. Marsal, J. Pallarès, B. Iñíguez, E. Palomares
{"title":"Effect of variations in blend preparation on the properties of P3HT:PCBM blend solar cells","authors":"M. Estrada, V. Balderrama, J. Albero, J. Nolasco, A. Cerdeira, L. Marsal, J. Pallarès, B. Iñíguez, E. Palomares","doi":"10.1109/MIEL.2010.5490514","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490514","url":null,"abstract":"Polymeric solar cells have attracted much attention during the last years due to their lower fabrication cost and possibility of using flexible substrates. However, their efficiency is still less than 5%. Among factors affecting solar cells efficiency, the active layer morphology related to blend preparation and annealing, is one of the most important. In this work we analyze the behavior of solar cells based on P3HT:PCBM blends prepared under different conditions. Basic parameters are extracted from measured characteristics in dark and under illumination. Modeling is used to understand mechanisms involved in the device behavior and during its degradation, when working in ambient conditions.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133753587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A quantum mechanical correction of classical surface potential model of MOS inversion layer MOS反转层经典表面势模型的量子力学修正
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490519
T. Kevkić, D. Petković
{"title":"A quantum mechanical correction of classical surface potential model of MOS inversion layer","authors":"T. Kevkić, D. Petković","doi":"10.1109/MIEL.2010.5490519","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490519","url":null,"abstract":"In this paper, an analyse of variational wave function approach corrections of classical surface potential model of MOS inversion layer is presented. These solutions are based on smoothing functions and parameters. In this way an explicit surface potential versus gate voltage relations in the case of strong inversion in semiconductor is derived. Results of these models are compared with results obtained by the numerical solver of coupled Poisson-Schrodinger equations.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134128595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of RF discharge structure on silicon etching in CF4/O2 射频放电结构对CF4/O2中硅腐蚀的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490516
Y. Grigoryev, A. Gorobchuk
{"title":"Effect of RF discharge structure on silicon etching in CF4/O2","authors":"Y. Grigoryev, A. Gorobchuk","doi":"10.1109/MIEL.2010.5490516","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490516","url":null,"abstract":"The effect of RF discharge structure on silicon etching process in CF4/O2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multi-component physical-chemical hydrodynamics describing convective-diffusion transfer and production of all mixture components. The special fixed distributions of electron density as well as results of RF discharge numerical simulation in hydrodynamic approximation were examined. The numerical evaluations of electron density influence on the main characteristics of silicon etching shown that the etching uniformity index substantially depends on the electron density variation in the radial direction. This fact is naturally neglected in the 1D-calculations of RF discharge.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122718355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The impact of process faults on specific parameters of a 2.3GHz CMOS LNA 工艺故障对2.3GHz CMOS LNA具体参数的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490478
A. Karagounis, A. Kanapitsas, B. Kotsos, C. Tsonos, A. Polyzos, E. Petropoulou
{"title":"The impact of process faults on specific parameters of a 2.3GHz CMOS LNA","authors":"A. Karagounis, A. Kanapitsas, B. Kotsos, C. Tsonos, A. Polyzos, E. Petropoulou","doi":"10.1109/MIEL.2010.5490478","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490478","url":null,"abstract":"This paper presents the impact of process faults — such as parameter variations and process variations — on specific parameters of a low noise amplifier (LNA) — like noise figure (NF), linearity (1 dB CP, IP3), S-parameters (S11, S21) voltage output signal. A review of mathematical types that shows the relations between specifications and parameters of the LNA is a tool to explain the behavior of the circuit under the presence of process shifts and parasitic elements. A differential source degeneration LNA has been designed in a 90nm CMOS UMC technology to validate the theoretical conclusions and investigate if it is possible to restore the circuit prescriptions to the desired values, varying one or more parameters.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125900192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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